Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Huang, Hao; Wang, Ying; Chen, Ke-Han; Fei, Xin-Xing

doi:10.1109/jeds.2023.3296093

Cited by 6 publications

(1 citation statement)

References 40 publications

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“…The layer materials and layer thicknesses are the same for the two bilayer structures or the two trilayer structures. For comparative analysis, the influence of intralayer defects on flat band voltage and hysteresis can be ignored, which means that the differences in the flat band voltage and hysteresis are mainly attributed to interface defects caused by different layer sequences. , Compared to bilayer BL1 and trilayer TL1 with the HfO 2 -on-Al 2 O 3 interface, bilayer BL2 and trilayer TL2 with the Al 2 O 3 -on-HfO 2 interface exhibit greater hysteresis, along with a negative shift of the flat band voltage. Trilayer TL1 exhibits the opposite hysteresis phenomenon to bilayer BL1, which is caused by the charge type of the SiO 2 layer being different from that of the Al 2 O 3 and HfO 2 layers .…”

Section: Resultsmentioning

confidence: 99%

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications

Lin,

Song,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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High-performance thin films combining large optical bandgap Al 2 O 3 and high refractive index HfO 2 are excellent components for constructing the next generation of laser systems with enhanced output power. However, the growth of low-defect plasma-enhanced-atomic-layer-deposited (PEALD) Al 2 O 3 for highpower laser applications and its combination with HfO 2 and SiO 2 materials commonly used in high-power laser thin films still face challenges, such as how to minimize defects, especially interface defects. In this work, substrate-layer interface defects in Al 2 O 3 single-layer thin films, layer-layer interface defects in Al 2 O 3 -based bilayer and trilayer thin films, and their effects on the laser-induced damage threshold (LIDT) were investigated via capacitance− voltage (C−V) measurements. The experimental results show that by optimizing the deposition parameters, specifically the deposition temperature, precursor exposure time, and plasma oxygen exposure time, Al 2 O 3 thin films with low defect density and high LIDT can be obtained. Two trilayer anti-reflection (AR) thin film structures, Al 2 O 3 /HfO 2 /SiO 2 and HfO 2 /Al 2 O 3 /SiO 2 , were then prepared and compared. The trilayer AR thin film with Al 2 O 3 / HfO 2 /SiO 2 structure exhibits a lower interface defect density, better interface bonding performance, and an increase in LIDT by approximately 2.8 times. We believe these results provide guidance for the control of interface defects and the design of thin film structures and will benefit many thin film optics for laser applications. KEYWORDS: plasma-enhanced atomic layer deposition, Al 2 O 3 single-layer thin film, Al 2 O 3 /HfO 2 /SiO 2 trilayer, laser-induced damage threshold, interface defect, interface bonding performance

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Section: Resultsmentioning

confidence: 99%

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications

Lin,

Song,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Low-pressure oxidation for improving interface properties and voltage instability of SiO2/4H-SiC MOS capacitor

Wang,

Lin,

et al. 2025

Applied Surface Science

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Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation

Wei,

Li,

Zhao

et al. 2024

Materials Today Communications

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Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

Cited by 6 publications

References 40 publications

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications

Low-pressure oxidation for improving interface properties and voltage instability of SiO2/4H-SiC MOS capacitor

Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation

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Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Cited by 6 publications

References 40 publications

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2 Trilayers for Ultraviolet Laser Applications

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2 Trilayers for Ultraviolet Laser Applications

Low-pressure oxidation for improving interface properties and voltage instability of SiO2/4H-SiC MOS capacitor

Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation

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Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al₂O₃/HfO₂/SiO₂ and HfO₂/Al₂O₃/SiO₂ Trilayers for Ultraviolet Laser Applications