2015
DOI: 10.1016/j.jallcom.2015.05.047
|View full text |Cite
|
Sign up to set email alerts
|

Leakage current behavior of BiFeO3/BiMnO3 multilayer fabricated by pulsed laser deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 28 publications
(6 citation statements)
references
References 36 publications
0
6
0
Order By: Relevance
“…25 With increasing the thickness of NiO, the large slope values (a z 3.7 for M-2, and a z 5.7 for M-3) indicate that another conduction mechanism (PF) exists. 64 The magnitude of the leakage current in the nanomultilayer is mainly determined by the charge carrier mobility, which will be largely reduced due to the insulating behavior of ultrathin Mottinsulator of NiO layers. The strong electron-electron repulsion will prevent charge tunneling through NiO and hence reduce the charge leakage along the out-of-plane direction.…”
Section: Resultsmentioning
confidence: 99%
“…25 With increasing the thickness of NiO, the large slope values (a z 3.7 for M-2, and a z 5.7 for M-3) indicate that another conduction mechanism (PF) exists. 64 The magnitude of the leakage current in the nanomultilayer is mainly determined by the charge carrier mobility, which will be largely reduced due to the insulating behavior of ultrathin Mottinsulator of NiO layers. The strong electron-electron repulsion will prevent charge tunneling through NiO and hence reduce the charge leakage along the out-of-plane direction.…”
Section: Resultsmentioning
confidence: 99%
“…And the leakage current of BTO/PZT superlattices at different temperatures can also be fitted well with trap-controlled SCLC (see Figure S1). For comparison, the large slope values (α ≈ 4.3 for PZT, and α ≈ 5.4 for BTO) indicate that another conduction mechanism exists in the pure ferroelectric films . Therefore, it is reasonable to consider that the BTO/PZT interfaces in the superlattices mainly play a major role for the leakage current characteristic.…”
Section: Resultsmentioning
confidence: 99%
“…24 For comparison, the large slope values (α ≈ 4.3 for PZT, and α ≈ 5.4 for BTO) indicate that another conduction mechanism exists in the pure ferroelectric films. 25 Therefore, it is reasonable to consider that the BTO/PZT interfaces in the superlattices mainly play a major role for the leakage current characteristic. Figure 5c is a schematic diagram showing the large space charges accumulated at the BTO/PZT interfaces and the movement of the space charges under an applied electric field.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…[84] In addition, Xinxin et al studied the BiFeO 3 /BiVO 4 composite films, [85] Rahul et al studied the BiFeO 3 /BiMnO 3 composite film and other materials, and proved that the coupling effect of the composite film, and the hetero-film interface structure is beneficial to the output of photovoltaic performance. [86] Bi 5 FeTi 3 O 15 /CuO (BFTO/CuO) films exhibit nearly 10-fold enhancement of shortcircuit photocurrent density (J sc ) over BFTO films, which is attributed to the internal electric field of the p-n junction as the driving force for photogenerated carriers, [87] the 0.5Ba(Zr 0.2 Ti 0.8 ) O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BZT-BCT) composite films have the high dielectric constant (≈1400), [88] K 0.5 Na 0.5 NbO 3 /BiMnO 3 is a solid solution film that fully combines the advantages of lead-free solution thin films (KNNO) and BiMnO 3 films, with excellent ferroelectric properties and photovoltaic response properties in the visible region. [89] Composite films can gather the advantages of multiple films to prepare better and multiple materials to realize multifunctional applications of thin film devices.…”
Section: Composite Filmsmentioning
confidence: 99%