2009
DOI: 10.1016/j.actamat.2009.06.063
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Leakage-current characteristics of vanadium- and scandium-doped barium strontium titanate ceramics over a wide range of DC electric fields

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Cited by 15 publications
(3 citation statements)
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“…[23][24][25][26][27][28][29][30] This is due to the fact that BST materials show a high dielectric constant combined with a low dissipation factor, which makes BST as one of the promising candidates for dielectric materials with potential applications in tunable microwave devices, 31 pyroelectric sensors, 32 and dynamic random access memory (DRAM). 33,34 To fabricate further high-performance ferroelectric materials, the simultaneous applications of oriented engineering and domain engineering are expected, where an oriented ceramic with a high degree of orientation and small grain is necessary. 22 The utilization of mesocrystals to develop oriented engineering and domain engineering is very promising to substantially enhance the performance of ferroelectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…[23][24][25][26][27][28][29][30] This is due to the fact that BST materials show a high dielectric constant combined with a low dissipation factor, which makes BST as one of the promising candidates for dielectric materials with potential applications in tunable microwave devices, 31 pyroelectric sensors, 32 and dynamic random access memory (DRAM). 33,34 To fabricate further high-performance ferroelectric materials, the simultaneous applications of oriented engineering and domain engineering are expected, where an oriented ceramic with a high degree of orientation and small grain is necessary. 22 The utilization of mesocrystals to develop oriented engineering and domain engineering is very promising to substantially enhance the performance of ferroelectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…Moura et al [20] showed that an addition of vanadium diffused the maximum of electric permittivity and decreased its value in the region of the ferroelectric transition of BaZr 0.1 Ti 0.9 O 3 . The influence of the vanadium addition on the dielectric properties of strontium titanate and strontium bismuth niobate was investigated by Liu et al [21], Bandyopadhyay et al [22] and Wu et al [23]. According to Nogucki et al [24] and Zeng et al [25] Based on the researches [27][28][29][30] it was found that besides of the presence of the modifier in the form of vanadium ions, the appropriate size of grains (≈1 µm) and the uniform distribution of the grain size are extremely important to obtain BaTiO 3 ceramics characterized by the high dielectric permittivity at room temperature (ε ≈ 3500).…”
Section: Introductionmentioning
confidence: 99%
“…To investigate the potential conduction mechanism and understand the phenomenon of carrier transport, the electric field-dependent leakage current density behavior was examined through the analysis of the space-charge-limited conduction process. In order to demonstrate the space-charge-limited conduction (SCLC) mechanism, we have plotted the graph between log J and log E in the applied positive bias field region as shown in figure 10(b), and fitted that data using the following equation [63,64]:…”
Section: Leakage Current Studiesmentioning
confidence: 99%