Leakage current of hadron irradiated silicon detectors – material dependence

Moll, M.; Fretwurst, E.; Lindström, G.

doi:10.1016/s0168-9002(98)01475-2

Cited by 172 publications

(108 citation statements)

References 5 publications

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“…The magnitude of initial beneficial annealing is dependent on irradiation conditions such as irradiation rate [19]. Therefore a certain controlled annealing is preferred prior to comparing various types of irradiation data.…”

Section: Annealingmentioning

confidence: 99%

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Hara¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Article:Hara, K., Allport, P.P., Baca, M. et al. ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade The ATLAS group has evaluated the charge collection in silicon microstrip sensors irradiated up to a fluence of 1 × 10 16 n eq /cm 2 , exceeding the maximum of 1.6 × 10 15 n eq /cm 2 expected for the strip tracker during the high luminosity LHC (HL-LHC) period including a safety factor of 2. The ATLAS12, n þ -on-p type sensor, which is fabricated by Hamamatsu Photonics (HPK) on float zone (FZ) substrates, is the latest barrel sensor prototype. The charge collection from the irradiated 1 Â 1cm 2 barrel test sensors has been evaluated systematically using penetrating β-rays and an Alibava readout system. The data obtained at different measurement sites are compared with each other and with the results obtained from the previous ATLAS07 design. The results are very consistent, in particular, when the deposit charge is normalized by the sensor's active thickness derived from the edge transient current technique (edge-TCT) measurements. The measurements obtained using β-rays are verified to be consistent with the measurements using an electron beam. The edge-TCT is also effective for evaluating the field profiles across the depth. The differences between the irradiated ATLAS07 and ATLAS12 samples have been examined along with the differences among the samples irradiated with different radiation sources: neutrons, protons, and pions. The studies of the bulk properties of the devices show that the devices can yield a sufficiently large signal for the expected fluence range in the HL-LHC, thereby acting as precision tracking sensors.

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Section: Annealingmentioning

confidence: 99%

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Hara¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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“…Gafchromic (Gafchromic is a registered trademark of ISP Corporation) Dosimetric Films HD-810 [17] and silicon detectors [18] were used in both facilities to measure the Total Ionizing Dose (TID) and the neutron fluence respectively.…”

Section: Dosimetric Measurements During Irradiationsmentioning

confidence: 99%

Optically stimulated luminescence materials for wide-spectrum neutron measurements at CERN

Ravotti

Gläser

Idri

et al. 2005

IEEE Trans. Nucl. Sci.

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“…Absolute uence was determined for each irradiation by gold activation with a precision of 10%. A slightly lower damage factor value of 0:76 0:04 was deduced from a direct experimental comparison of leakage currents caused by dierent particles [6]. The diodes under study were processed by MICRON on high resistivity 300 5 m thick n-type oat-zone silicon wafers.…”

mentioning

confidence: 99%

Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+-n-n+ diodes

Cindro

Kramberger

Mikuž

et al. 1998

Nuclear Instruments and Methods in Physics Research Section A:

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Silicon pad diodes fabricated on n type substrates were irradiated with fast neutrons from the TRIGA reactor facility to uences around 510 13 n=cm 2 . Annealing of radiation-induced defects was monitored via the full depletion voltage (FDV) obtained from C V measurements, both during and after irradiation. As much a s 5 0 % dierence in FDV was observed to appear between biased and unbiased diodes in a few hours after irradiation, with the biased diodes having the higher value. The FDV dierence persists through later stages of annealing and reverse annealing. Upon switching o the bias voltage, the dierence in FDV diminishes within days at room temperature. Observation of dierent eective dopant concentrations within the same detector in regions with and without electric eld provides further evidence for bias-dependent annealing. No bias eect is seen on the reverse-current annealing.The change of eective impurity concentration in silicon, caused by irradiation with fast heavy particles (protons,pions, neutrons), results in a change of the full depletion voltage. Another eect of irradiation is an increase of the leakage current related to the introduction of defects with energy levels near mid-gap. The damage is found to scale with the non-ionizing energy loss (NIEL) of particles. Silicon will beused as the sensing medium for charged particles in trackers and calorimeters at experiments being constructed for the LHC. The increase of full depletion voltage together with the increase of leakage current could result in an electric breakdown, thermal runaway and unacceptable increase in parallel noise, setting a limit on usage of silicon detectors for these applications.A lot of measurements have been performed in order to predict the level of radiation damage in silicon at LHC experiments. An increase of eective acceptor concentration has been observed during irradiations. This increase,

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Leakage current of hadron irradiated silicon detectors – material dependence

Cited by 172 publications

References 5 publications

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Optically stimulated luminescence materials for wide-spectrum neutron measurements at CERN

Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+-n-n+ diodes

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