Leakage Current Properties of Cation-Substituted BiFeO₃ Ceramics

Abstract

Cation-doped BiFeO 3 ceramics were fabricated by sintering coprecipitated and calcined powders at 700 -900C to study the effect of cation doping on the leakage current property of the sintered

Electrical conductivity and thermopower of (1 − x) BiFeO3– xBi0.5K0.5TiO3(x = 0.1, 0.2) ceramics near the ferroelectric to paraelectric phase transition

“…20,21 The aliovalent substitution of Fe 3+ with e.g. Ti 4+ and Ni 2+ on the perovskite B site has profound effect on the conductivity of BFO [27][28][29] where tetravalent cations reduce the conductivity and divalent cations increase the conductivity. Particularly, substitution with Ti has shown great promise to reduce the conductivity of BFO.…”

Enhanced multiferroic properties in epitaxial Yb-doped BiFeO3 thin films

“…Several mechanisms have been proposed to explain the leakage current conduction for BiFeO 3 . [18,[33][34][35][36][37] The present paper suggests that the reduced leakage current can be attributed to the oxygen vacancy concentration reported previously. [30] Oxygen vacancies, which are created to compensate for the positive charge deficiency caused by Electron.…”

“…4 (2015) the vaporization of Bi and the reduction of Fe 3+ ions to Fe 2+ , act as donor-like trapping centers for electrons. [37] Therefore, the electrons can be activated easily to be free for electric conduction under an applied electric field, contributing to the higher leakage current in the BiFeO 3 thin film. On the other hand, the leakage current of the Yb-doped BiFeO 3 thin film might be reduced because of the suppressed oxygen vacancies resulting from Yb doping.…”

Control of electrical leakage in magneto‐electric gallium ferrite via aliovalent substitution

“…In contrast, Zn 2+ doping is expected to give rise to higher oxygen vacancy concentration and hence, it should have caused higher electrical leakage, as against the observations. In addition to defect chemistry, in systems such as BFO, Zn 2+ doping is found to suppress the formation of secondary phases resulting in a decrease in the leakage current 34 suggesting that there could be other possible explanations. However, in case of GFO, since XRD data rules out the role of secondary phase formation in controlling electrical leakage upon doping as second phases are absent in pure as well as Zn-doped samples.…”

“…A very useful technique to control the electrical leakage and to improve ferroelectric properties of multiferroics (or ferroelectrics) is the atomic substitution by different ions, that is, doping or co-doping using iso-valent and aliovalent ions such as La, Nd, Ti, or Ni and various other ions. [28][29][30][31][32][33][34][35][36][37][38][39] The control of electrical leakage, consequently, is an outcome of a combination of factors such as tuning of oxygen vacancy concentration, formation of compensating defects, reduction in volatilization of volatile elements or changes in the microstructural features such as that of grains and grain boundaries or porosity or secondary phases. Similar strategies have also been adopted for GFO, albeit to a very limited extent.…”