Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment

Luo, Haoxun; Jiang, Huaxing; Chen, Zimin; Pei, Yanli; Feng, Qian; Zhou, Hong; Lü, Xing; Lau, Kei May; Wang, Gang

doi:10.1109/led.2020.3013918

Cited by 24 publications

(10 citation statements)

References 35 publications

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“…In 2020, Luo et al published their work on Schottky diodes fabricated on n-type Ga 2 O 3 with Ni/Au as the Schottky metal contact (22). However, they had an extra low power CF 4 plasma treatment before Schottky metal deposition.…”

Section: Resultsmentioning

confidence: 99%

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II

Lau¹

2022

ECS Trans.

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Sze’s theory has been the dominating theory regarding the Schottky emission effect (image force barrier lowering). The author noticed that the older and almost forgotten Krömer’s theory can frequently give a much better fit to experimental data especially for higher reverse bias voltage. In order to explain Krömer’s theory, it is necessary to apply the concept of velocity overshoot and quasi-ballistic transport to the depletion region in Schottky diodes. In this paper, the author will propose a unified theory for reverse leakage current in Schottky diodes.

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Section: Resultsmentioning

confidence: 99%

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II

Lau¹

2022

ECS Trans.

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“…The carrier concentration of the crystal is approximately 1 × 10 17 cm −3 . The arrangement of atoms in the monoclinic system β−Ga 2 O 3 allows a facile exfoliate into thin flakes in the (100) direction, which has a larger lattice constant than other directions [9,34]. The device process flow is shown in Figure 1.…”

Section: Methodsmentioning

confidence: 99%

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Qiu

Wang

et al. 2022

Crystals

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β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.

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“…The strong electric field within the depletion region reduces the lateral distance between the traps and the available states in the conduction band, substantially increasing the probability of electron tunneling [137]. [140]. Okumura and Tanaka performed wet and dry etchings for β-Ga 2 O 3 and investigated various acid and alkali solutions to remove the plasma-induced damage [141].…”

Section: Ohmic Contacts To β-Ga 2 Omentioning

confidence: 99%

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Kim

2021

SN Appl. Sci.

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Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

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Leakage Current Reduction in β-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment

Cited by 24 publications

References 35 publications

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

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Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment

Cited by 24 publications

References 35 publications

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Contact Info

Product

Resources

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Leakage Current Reduction in β-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II

Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga₂O₃ or Diamond Part II