Leakage Reduction of Quasi-Vertical GaN Schottky Barrier Diode With Post Oxygen Plasma Treatment

Liu, Jiang; Han, Chuanyu; Liu, Weihua; Geng, Li

doi:10.1109/ted.2022.3212336

Cited by 6 publications

(1 citation statement)

References 38 publications

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“…A slightly lower measured BV of 214 V indicates the good crystal quality of the drift layer as well as the effectivity of the edge termination of this work. foreign substrates [10,11,[32][33][34][35][36][37][38]. The R ON,sp of this work is lower than the reported results, also suggesting the good conductivity of the epi-stack.…”

Section: Resultscontrasting

confidence: 63%

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

Sun,

Feng,

Wei

et al. 2024

Semicond. Sci. Technol.

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In this letter, vertically conductive GaN epilayer on SiC substrate was achieved without the typically used conductive buffer layer. Here, in order to reduce the impacts of band offset of different layers on vertical conductivity and improve the vertical carrier transportation, an ultrathin AlGaN buffer layer was employed to replace the thick conductive buffer layer. Fully-vertical Schottky barrier diode (SBD) based on this vertically conductive epi-stack demonstrated a much lower specific on-resistance of 0.84 mΩ∙cm2 with superior thermal stability. Moreover, the SBD also exhibited an on/off ratio of ~5×109 and a nearly unity ideality factor of 1.08. This approach lays the foundation for the heterogeneous integration of GaN/SiC based devices.

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