Simulated resonances were 1.104, 2.144, and 2.328 GHz, while the measured ones were 1.1, 2.1, and 2.3 GHz.In respect of radiation patterns at resonance frequencies, the simulated antenna presented maximum gains of 0.8545 dB, 2.6899 dB, and 2.3305 dB, respectively.A proof of concept using a powerharvester working at 915 MHz was conducted to get experimental radiation patterns, which at this frequency showed maximum voltage values 992 mV at 2208 on the E-plane and 1418 mV at h 5 08 on the Hplane, respectively. At 915 MHz, the simulated antenna showed a gain of 0.0784 dB at 1808 for both E-plane and H-plane and maximum radiated electric field multiplied by the radial distance of 556 mV also observed at 1808 for both E-plane and H-plane.The LPTT antenna is broadband, this ensures an impedance bandwidth of 2 GHz from 400 MHz to 2.4 GHz reference to 25 dB. The antenna performance is considerably good at its three resonance frequencies, where relatively low return losses and acceptable gains are observed. A disadvantage of this type of antenna is that if bandwidths beginning at several hundred MHz are required, this would result in a relatively large antenna. The LPTT antenna does not have high gains and low return loss as typical patches have but its main advantage is that is broadband. This antenna is applicable in low power consumption devices, battery backup or hybrid system based on both battery power and RF energy harvesting.ABSTRACT: The feasibility of utilizing small-size low-cost commercial light-emitting diodes (LEDs) to drive the optically controlled microwave switches (OCMS) is experimentally investigated. A series of experiments are performed within 0.5-5 GHz bandwidth by utilizing six kinds of LEDs and a 980 nm-laser to drive the OCMS. The results show that white, red, and violet LEDs are three competitive candidates to replace high-cost lasers as the controller of OCMS if their power density impinging on the silicon dice of the OCMS could be increased up to 100 mW=mm 2 . Additionally, the reason leading to high insertion loss of the OCMS driven by the LEDs is revealed.ABSTRACT: An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating f t /f max of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 lm emitter and a composite collector. Base resistance R bb of around 19 X was achieved to sustain a relative high f max in 0.5 lm linewidth device. Small signal equivalent circuit model was established, and good agreement between measured and simulated values was achieved. Effects of some key parameters were analyzed based on simulated small signal equivalent circuit model.