LEDs Based on Heteroepitaxial GaN on Si Substrates

Egawa, Takashi; Oda, Osamu

doi:10.1007/978-981-10-3755-9_3

Cited by 3 publications

(4 citation statements)

References 247 publications

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“…For HEMTs using Si substrates, it is necessary to grow highquality AlN buffer layers. [107] It is very well known that the deposition of an AlN buffer layer significantly improves the quality of GaN grown on it. We therefore tried to grow ultrathin deposition of AlN on Si substrates using REMOCVD by the pulse growth method in which we could apply RHEED to observe the initial growth stage.…”

Section: Growth Of Thin Aln On Si Substratesmentioning

confidence: 99%

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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For the production of nitride‐based optical and power devices, it is known that metal organics chemical vapor deposition (MOCVD) is an industrial method which is used worldwide. However, MOCVD has disadvantages: 1) a lot of ammonia gas is consumed; 2) the sublimation of GaN is not negligible at growth temperature and these increase the production cost; 3) the growth of in‐containing nitrides is difficult because the growth temperature is too high; and 4) using large Si substrates of 150–300 mm diameter for industrial production, wafer breakage and bowing occur. It is therefore important to develop novel epitaxial growth methods that can replace the MOCVD method. Recently, high‐density radical source (HDRS) is developed by combining inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) which can be applied to molecular beam epitaxy (MBE) in order to increase the growth rate of nitrides. Another novel method, the radical enhanced MOCVD (REMOCVD) method with using very high frequency (VHF) plasma, has also been developed. This REMOCVD allows the low growth temperature without using any ammonia gas. These novel methods are promising for replacing the MOCVD method from the viewpoint of production cost without ammonia gas usage.

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Section: Growth Of Thin Aln On Si Substratesmentioning

confidence: 99%

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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“…GaN has been developed into one of the most important semiconductor materials after Si with excellent photoelectric properties. Due to the lack of affordable natural substrates, GaN is usually grown by heteroepitaxy on sapphire, , SiC, , or Si, , which inevitably brings additional defects and stress. , In recent years, van der Waals epitaxy (vdWE) of GaN on two-dimensional (2D) materials such as hexagonal boron nitride (h-BN) has attracted widespread attention. − The h-BN weakly bonded 2D intermediate layer is believed to minimize the lattice mismatch between the epitaxial layer and the heterogeneous substrate. , However, the flat surface of 2D materials lacks defects, atomic layer steps, and impurity atom type of nucleation sites, , which make it difficult to form a film. , Therefore, it is almost impossible for GaN to nucleate on 2D materials unless 2D materials are imperfect. The natural defects and wrinkles induced during 2D materials’ growth can, sometimes, serve as a nucleation site; a continuous film of GaN is, however, usually difficult to obtain due to the lack of sufficient nucleation sites.…”

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

et al. 2023

Crystal Growth & Design

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The excellent physical and chemical properties of two-dimensional (2D) materials provide the possibility to promote the further development of 3D III-nitride semiconductors. Growing GaN films on 2D materials like hexagonal boron nitride (h-BN) can reduce the defects and stress caused by lattice mismatch and thermal mismatch and improve the crystal quality of GaN. Here, the growth mechanism of exfoliable GaN films grown on processed wrinkled h-BN/sapphire substrates by van der Waals epitaxy is reported. The processed wrinkled h-BN is obtained from natural wrinkled h-BN through O 2 plasma treatment. The O 2 plasma creates new atomic steps in the wrinkles and also additional defects in the flat areas. Metal-organic chemical vapor deposition was used to grow GaN, and it was found that GaN preferentially nucleated along the processed wrinkles. The physical mechanism of preferential nucleation of GaN along h-BN wrinkles was investigated with first-principles calculations, which reveals that compared with flat areas, the wrinkles showed greater N atom adsorption energy (−5.55 eV). The complete growth process of GaN nucleation along the wrinkles, followed by lateral growth of islands and finally merging to form a flat single-crystal GaN film, was fully demonstrated. The obtained GaN film has a typical atomic-step terrace, a dislocation density of 7.23 × 10 8 cm −2 , and a low compressive stress of 0.095 GPa. Due to the weak van der Waals force between the h-BN layers, the obtained GaN film can be easily released. Our work provides a new strategy for the growth of high-quality exfoliable GaN films on 2D materials, laying the foundation for the preparation of transferable GaN flexible devices.

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“…Strain engineering in an active layer of LEDs allows for modification of an internal quantum efficiency of radiative carrier recombination [27,28]. The design and fabrication of such light emitters, based on "long period" SLs, are well described in many books and reviews [29][30][31][32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

III-Nitride Short Period Superlattices for Deep UV Light Emitters

Nikishin

2018

Applied Sciences

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III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.

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LEDs Based on Heteroepitaxial GaN on Si Substrates

Cited by 3 publications

References 247 publications

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

III-Nitride Short Period Superlattices for Deep UV Light Emitters

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