Lepton flavor violation in the MSSM extension with gauged baryon and lepton numbers

Zhao, Shu-Min; Feng, Tao; Zhang, Haibin; Zhan, Xi-Jie; Zhang, Yinjie; Yan, Ben

doi:10.1103/physrevd.92.115016

Cited by 23 publications

(14 citation statements)

References 31 publications

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“…Thermoelectric properties of a material are investigated in order to evaluate its efficiency for various thermoelectric applications such as refrigeration, waste heat recovery, power generation, temperature measurements, etc. [47][48][49][50][51] The dimensionless quantity known as the figure of merit, ZT ¼ S 2 σ κ e þκ L , characterizes a material's thermoelectric performance. [52,53] Here, S denotes the Seebeck coefficient, σ, and κ e are the electrical and the electronic thermal conductivity, respectively.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

Electronic, Elastic, and Thermoelectric Properties of Bulk CdX (X = S, Se, and Te) Binary Semiconductors from First‐Principles Approaches

AlGhamdi

Saini

Kumar

2023

Physica Status Solidi (b)

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Due to their direct energy bandgaps and other unique structural, electrical, and optical properties, II-VI binary semiconductors have piqued the interest of many technological applications, including spintronics, optoelectronics, solar cells, photovoltaic cells, photodetectors, light-emitting diodes, and so on. [1][2][3][4][5][6][7] For example, ZnSe and its alloys are appealing materials for lightemitting diodes and laser diodes. These days, mercury-cadmium telluride is widely used in infrared detector arrays. Because of their nonlinear properties, CdS, CdSe, and CdTe, as well as their alloys, have sparked intense interest for their use in photovoltaic devices and other optoelectronics applications. [8][9][10][11][12][13] Depending on the synthesis conditions, CdX (X = S, Se, and Te) semiconductors can crystallize into various structures, including wurtzite and zinc-blende. Theoretical investigations predicted that CdX (S, Se, and Te) semiconductors are stable in both the zinc-blende and wurtzite phases, whereas experimental studies revealed that for CdS and CdSe, the wurtzite phase is stable, and CdTe is stable in the zinc-blende structure. [14][15][16][17][18][19][20] The present study examines both the zinc-blende and wurtzite forms of CdX semiconductors.CdX (X = S, Se, and Te) semiconductors have been studied extensively for various potential applications. [21][22][23] Theoretically, numerous works based on ab initio approaches have examined the structural, electronic, elastic, and optical properties of these chalcogenides so far. Guo and co-workers have studied the electronic, mechanical, optical, and thermodynamical properties of CdS, CdSe, and CdTe in the cubic zinc-blende crystal structure. [24] Boutaiba and co-workers investigated the relativistic effects on the fundamental properties of binary semiconductors CdX (X = S, Se, and Te) such as structural, electronic, optical, and transport properties. [25] The electronic structures of the abovementioned binary semiconductors were examined by John et al. in both the wurtzite and zinc-blende forms. [26] The behavior of the electronic, elastic, and lattice dynamical properties of the CdX (X = S, Se, and Te) semiconductors under pressure was investigated by Deligoz et al. [27] Yamçiçier and co-workers studied the transition mechanism of the wurtzite phase of CdTe under high pressure and found that wurtzite CdTe undergoes a phase transition at high pressures of 10 and 140 GPa to zinc-blende and orthorhombic structures, respectively. [28] The stability, electronic, and optical properties of CdTe under hydrostatic pressure were examined by Liu and co-workers. [29] Recently, the electronic, optical, and thermoelectric properties of CdX (X = S, Se, and Te) monolayers were reported by Naseri et al. [30] Mohanta and co-workers investigated the elastic, piezoelectric, electron, and phonon transport properties of hexagonal buckled CdX (X = S, Se) monolayers using the first-principles method. They predicted ultralow lattice thermal conductivity of 1.08 and 0.75 W m À1 K...

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Section: Thermoelectric Propertiesmentioning

confidence: 99%

Electronic, Elastic, and Thermoelectric Properties of Bulk CdX (X = S, Se, and Te) Binary Semiconductors from First‐Principles Approaches

AlGhamdi

Saini

Kumar

2023

Physica Status Solidi (b)

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“…The lightest mass eigenstate of scalar neutrino is supposed as dark matter in this work. The other mass matrix and couplings can be found in our previous work [31].…”

Section: The Blmssmmentioning

confidence: 99%

Scalar neutrino dark matter in BLMSSM

Zhang,

Zhao,

Dong

et al. 2020

Preprint

Self Cite

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This paper discusses the possibility of using the lightest scalar neutrino as a dark matter candidate in BLMSSM. BLMSSM is the extension of the minimal supersymmetric standard model(MSSM). Its local gauge group ising the lightest scalar neutrino is dark matter candidate, we deduce the relic density. We calculate the numerical results in detail and find suitable parameter space. The numerical discussion can confine the parameter space and make for dark matter research.

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“…2 Among credible solutions, thermoelectric (TE) technology has garnered substantial interest due to its potential to convert waste heat into usable electricity, [3][4][5] offering a sustainable approach for enhancing energy efficiency and minimizing environmental impact. 6 Nevertheless, several challenges to this technology persist, primarily stemming from the need for high TE efficiency materials, which can be quantied by using the dimensionless gure of merit (i.e., ZT ¼ S 2 T rk , where S is the Seebeck coefficient, T is the absolute temperature, r is the electrical resistivity, and k = k e + k l is the total thermal conductivity from electronic and phononic parts). Most of the current state-of-the-art TE materials are semiconductors, while metallic materials have received less attention.…”

Section: Introductionmentioning

confidence: 99%

Exploring finite-temperature electronic transport in CoSi alloys with transition metals (Cr, Mn, Fe, and Ni) using the KKR-CPA method

Nam,

Phung,

Suzuki

et al. 2024

J. Mater. Chem. A

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Lepton flavor violation in the MSSM extension with gauged baryon and lepton numbers

Cited by 23 publications

References 31 publications

Electronic, Elastic, and Thermoelectric Properties of Bulk CdX (X = S, Se, and Te) Binary Semiconductors from First‐Principles Approaches

Electronic, Elastic, and Thermoelectric Properties of Bulk CdX (X = S, Se, and Te) Binary Semiconductors from First‐Principles Approaches

Scalar neutrino dark matter in BLMSSM

Exploring finite-temperature electronic transport in CoSi alloys with transition metals (Cr, Mn, Fe, and Ni) using the KKR-CPA method

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