2003
DOI: 10.1109/tns.2003.821811
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LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics

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Cited by 70 publications
(47 citation statements)
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“…Protons interact with Si nuclei generating showers of light fragments and recoiling heavy ions [1][2][3]. The light fragments of the reaction products are seen to produce LET of less than 1.5 MeV-cm 2 /mg [2].…”
Section: Calculation and Discussionmentioning
confidence: 99%
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“…Protons interact with Si nuclei generating showers of light fragments and recoiling heavy ions [1][2][3]. The light fragments of the reaction products are seen to produce LET of less than 1.5 MeV-cm 2 /mg [2].…”
Section: Calculation and Discussionmentioning
confidence: 99%
“…where N 1 is the concentration of Si, which is 5 6 10 22 / cm 3 and d Si is the Si thickness of 0.15 mm.…”
Section: Proton Induced Seu Cross Section Predictionmentioning
confidence: 99%
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“…According to studies from the manufacturer, SEL have been observed at linear energy transfer (LET) levels of 86.9 MeV cm 2 /mg and higher at room temperature and at an operating temperature of 125 • C [45]; another study [44] has observed SEL at LET levels of 55 MeV cm 2 /mg and higher. The typical LET for nuclear interaction in silicon, by far the most abundant material around the sensitive nodes of the chip, is around 16 MeV cm 2 /mg [46] which is far below the thresholds observed to cause SEL. However, there are other materials in the chip that can lead to recoils with larger LET.…”
Section: Front-end Fpgasmentioning
confidence: 91%
“…This energy is above the maximum recommended in the JEDEC standard (150 MeV) and from a nuclear reaction point of view is considered to be an energy for which SEE cross sections in silicon are saturated [22], [23].…”
Section: A Saturated Cross Sections At 230 Mevmentioning
confidence: 93%