Letters on the Theater

Andreev, Leonid

doi:10.7560/770256-019

Cited by 1 publication

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“…One question is interestinghow the threshold energies of impact ionization are changing in the solid solutions with change of the band structure of the material. Specifically, when designing APDs based on the InGaAs, GaAsSb solid solutions [59,60], which are more narrow-gap semiconductors in comparison with GaAs, it shall take into account that the threshold of direct ionization is reduced by adding a material with a higher or lower value of the ionization coefficient of holes and electrons and stays within the first conductivity band due to a smaller value of the effective mass of electrons in comparison with the mass of the holes. This threshold is closer to the band gap (ε ie ≈ E g ).…”

Section: Coefficient Of Impact Ionization Of Holes In the Semiconduct...mentioning

confidence: 99%

Monopolarity of hot charge carrier multiplication in A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=- semiconductors at high electric field and noiseless avalanche photodiodes (a R e v i e w)

et al. 2022

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The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed. Keywords: impact ionization, multi-valley semiconductors, band structure, monopolarity of multiplication, avalanche photodiodes.

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Section: Coefficient Of Impact Ionization Of Holes In the Semiconduct...mentioning

confidence: 99%