Li-doped high-entropy
oxides (Li-HEO) are promising electrode materials
for Li-ion batteries. However, their electrical conduction in a wide
range of temperatures and/or at high pressure is unknown, hindering
their applications under extreme conditions. Especially, a clear understanding
of the conduction mechanism is needed. In this work, we determined
the carrier type of several Li-doped (MgCoNiCuZn)O semiconductor compounds
and measured their electrical conduction at temperatures 79–773
K and/or at pressures up to 50 GPa. Three optical band gaps were uncovered
from the UV–vis–NIR absorption measurements, unveiling
the existence of defect energy levels near the valence band of p-type
semiconductors. The Arrhenius-like plot of the electrical conductivity
data revealed the electronic conduction in three temperature regions,
i.e., the ionization region from 79 to 170 K, the extrinsic region
from ∼170 to 300 K, and the intrinsic region at ≥300
K. The closeness of the determined electronic band gap and the second
optical band gap suggests that the conduction electrons in the intrinsic
region originate from a thermal excitation from the defect energy
levels to the conduction band, which determines the electronic conductivity.
It was also found that at or above room temperature, ionic conduction
coexists with electronic conduction with a comparable magnitude at
ambient pressure and that the intrinsic conduction mechanism also
operates at high pressures. These findings provide us a fundamental
understanding of the band structure and conduction mechanism of Li-HEO,
which would be indispensable to their applications in new technical
areas.