Lift-off of Free-standing Layers in the Kerfless Porous Silicon Process

Kajari‐Schröder, Sarah; Käsewieter, Jörg; Hensen, Jan; Brendel, Rolf

doi:10.1016/j.egypro.2013.07.365

Cited by 27 publications

(20 citation statements)

References 1 publication

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“…Furthermore, reducing the pillar density will result in easier detachment. As the detachment front proceeds further into the sample area, the applied stress is redistributed on the remaining unbroken pillars and will be higher [12]. Thus, the progress of the detachment is easier once the detachment front has started to propagate a few cm into the laserdefined area, as long as the pillar size and density remain the same.…”

Section: Numerical Modeling Of the Detachment Processmentioning

confidence: 94%

“…Even though the total cross-sectional area of the silicon bridges is small, an enormous force needs to be applied in order to exceed the fracture strengths of the pillars if the force is applied normal to the HP-DL [12]. Thus, in order to make detachment easier, usually a moderate pulling force is applied from one of the edges or corners of the epitaxial film such that the force is concentrated on a few silicon bridges closest to the edge.…”

Section: Towards Achieving a High Detachment Yield In The Porous Silimentioning

confidence: 98%

“…The set-up used for simulation is similar to that used in [12] and is shown in Fig. 2 (a) and (b), where the silicon pillars are approximated as cylindrical rods with chamfered edges and the LP-TL is taken to be similar to bulk silicon for simplicity.…”

Section: Finite Element Modeling Of the Detachment Processmentioning

confidence: 99%

“…For detachment as a freestanding foil, slight bending forces on the wafer can be applied to initiate the detachment process from one of the edges or corners of the laser-grooved area. To do this in a controlled manner, a curved vacuum chuck has been used by other groups [12]. For detachment after bonding to glass, the glass and parent substrate are pulled apart from one of the edges or corners in a peeling action.…”

Section: Towards Achieving a High Detachment Yield In The Porous Silimentioning

confidence: 99%

See 3 more Smart Citations

Kerfless layer-transfer of thin epitaxial silicon foils using novel multiple layer porous silicon stacks with near 100% detachment yield and large minority carrier diffusion lengths

Radhakrishnan

Martini

Depauw

et al. 2015

Solar Energy Materials and Solar Cells

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Section: Numerical Modeling Of the Detachment Processmentioning

confidence: 94%

Section: Towards Achieving a High Detachment Yield In The Porous Silimentioning

confidence: 98%

Section: Finite Element Modeling Of the Detachment Processmentioning

confidence: 99%

Section: Towards Achieving a High Detachment Yield In The Porous Silimentioning

confidence: 99%

See 2 more Smart Citations

Kerfless layer-transfer of thin epitaxial silicon foils using novel multiple layer porous silicon stacks with near 100% detachment yield and large minority carrier diffusion lengths

Radhakrishnan

Martini

Depauw

et al. 2015

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

“…Currently, extensive research is focussed on low-cost methods for controllable fabrication of Si nanostructures. Among different methods to fabricate Si nanostructures, metal-assisted chemical etching (MACE) [1][2][3][4] is one of the promising techniques because of its simplicity, cost-effectiveness and versatility. Various Si nanostructures, for example, Si nanowires (SiNWs), porous Si, and mesoporous Si, have been successfully fabricated by this method, with specific control over their morphological features [5].…”

Section: Introductionmentioning

confidence: 99%

Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application

Venkatesan

Mayandi

Pearce

2019

J Mater Sci: Mater Electron

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In this work, upgraded metallurgical grade silicon (UMG-Si) wafer was used to fabricate mesoporous nanostructures, as an effective antireflection layer for solar photovoltaic cells. The length of the vertical Si nanostructure (SiNS) arrays was altered by varying the etching time period during metal assisted chemical etching (MACE) process, using a silver catalyst. The optical, structural, morphological changes and the antireflection properties of Si nanostructures formed on UMG-Siwafer were analysed. Scanning electron microscopy and photoluminescence studies indicate that Si nanocrystals are formed on the surface and along the vertical nanowires. The pore size depends on the Ag nanoparticle size distribution. All the samples demonstrated a luminescence band centred around 2.2 eV. From the optical results, samples etched for 45 minutes show strong absorption in the visible spectrum. The minimum and maximum surface reflectance in the visible region was observed for 15 minutes and 60 minutes etched SiNS. Based on the observed results, 15 minutes etched Si with a uniform porous structure has minimum reflectance across the entire silicon UV-visible absorption spectrum, making it worth further investigation as a candidate for use as an antireflection layer in silicon based solar cells.

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From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

Gupta,

Min,

Lee

et al. 2024

Advanced Energy Materials

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The increasing adoption of solar energy as a renewable power source marks a significant shift toward clean, sustainable alternatives to conventional energy forms. A notable development in this field is the advancement of thin monocrystalline silicon (c‐Si) solar cells. Characterized by their lightweight, flexible nature, these solar cells promise to transform the renewable energy landscape with enhanced durability, adaptability, and portability. Amidst the growing demand for sustainable energy solutions, refining and evolving thin c‐Si solar cell technologies is crucial. This review comprehensively examines the latest progress in thin c‐Si solar energy conversion device technologies, offering an extensive overview of current methodologies for producing thin c‐Si films, advanced light trapping techniques, surface passivation strategies, and methods for managing thin wafers. It also explores the wide‐ranging applications of thin c‐Si solar cells. Furthermore, this article sheds light on the techno‐economic aspects, highlighting the intertwined challenges of commercializing these innovative cells. Through an in‐depth analysis of the latest advancements, this review serves as a valuable resource for researchers and industry experts, keeping them abreast of current trends and catalyzing further advancements in thin c‐Si solar cell technology.

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Lift-off of Free-standing Layers in the Kerfless Porous Silicon Process

Cited by 27 publications

References 1 publication

Kerfless layer-transfer of thin epitaxial silicon foils using novel multiple layer porous silicon stacks with near 100% detachment yield and large minority carrier diffusion lengths

Kerfless layer-transfer of thin epitaxial silicon foils using novel multiple layer porous silicon stacks with near 100% detachment yield and large minority carrier diffusion lengths

Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

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