In our Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry [1] studies on the gas-phase reactivity of Group 14 derivatives, we initially examined the behavior of tetramethylsilane, Si(CH 3 ) 4 (TMS). Using mild electron ionization (nominal energies between 10 and 12 eV) and pressures in the range 10 À8 -10 À5 mbar, the main ion observed is the trimethylsilyl cation, Si(CH 3 ) 3 + , formed through the fast decomposition of the radical cation Si(CH 3 ) 4 + C. A striking feature of the spectrum is the presence at low pressures of a weak signal ( % 1 %) at m/z 161 that fades away a few seconds after the ionization process. It corresponds to the most abundant isotopomer of the ion Si 2 (CH 3 ) 7 + (I + ). The stoichiometry of this species suggests a somewhat unusual electronic structure, which prompted us to carry out a more detailed study.Some important databases [2] do not report the existence of I + , although this ion was reported in 1974 by Klevan and Munson [3] as the product of reaction (1), which takes place under high-pressure conditions (0.3 Torr).Using high-pressure mass spectrometry, Stone and coworkers carried out a careful study of this reaction, as well as of similar processes involving Ge and Sn derivatives.[4] They also determined D r H m (1) and D r S m (1) for reaction (1) as (À22.3 AE 0.4) kcal mol À1 and (À35.2 AE 0.9) cal mol À1 K À1 , respectively. These values lead to a value for D r G m (1) of (À11.8 AE 0.7) kcal mol À1 . Herein, we report our observations that under the lowest pressures indicated above, kinetic excitation of Si(CH 3 ) 3 + by means of on-resonance irradiation or slightly off-resonance irradiation (SORI) under multiple-collision conditions [5] increases the yield of I + . In the presence of a cooling gas and without ion excitation, the abundance of this ion increases rather slowly. As expected from the value of D r G m (1), the equilibrium abundance observed under our working conditions is small.[6] Figure 1 shows a spectrum of ion I + .Collision-induced decomposition (CID) experiments on I + using argon as the target gas and energies at the center of mass below 2 eV show that Si(CH 3 ) 3 + is the only ion formed. This observation also indicates a "fragile" bond between Si(CH 3 ) 3 + and TMS, in agreement with the results reported in reference [3].Similar experiments using perdeuterated tetramethylsilane, Si(CD 3 ) 4 (TMSD), yield the ion Si 2 (CD 3 ) 7 + (I D + ), and CID experiments conducted as indicated for I + lead to the formation of Si(CD 3 ) 3 + as the sole ionic product. The study of mixtures of TMS and TMSD was generally conducted using 1:1 mixtures and nominal pressures of the individual reagents of about 1-2 10 À7 mbar, with argon being added up to pressures of 8 10 À7 -1.