“…Considering the two known mechanisms that can explain how a molecular layer influences band bending, our data suggest that the static field mechanism based on electrostatics is dominant in this case. In future studies, direct observations of the surface state energies, e.g., with energy-resolved electrochemical impedance spectroscopy, , and direct analysis of the band bending, e.g., with angle-resolved photoemission spectroscopy, may be used to further analyze the influence of dipolar ligands, ligands with different binding groups, , and other surface chemical modifications. Furthermore, the influence of dipolar ligands on plasmonic properties of other semiconductor NCs, such as doped ZnO, , CdO, and p-type copper chalcogenide NCs, each having distinct electronic structure and band bending characteristics, would broaden understanding of the properties and phenomena we observed here for ITO NCs …”