Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Jaehee; Kim, Sang Wan; Kim, Wandong; Park, Jae Chul; Kim, Chang Jung; Park, Byung‐Gook

doi:10.1109/ted.2011.2109388

Cited by 31 publications

(18 citation statements)

References 27 publications

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“…3, the negative magnetoresistance is strongly dependent on the temperature, which diminishes as the temperature increases from 1:4 K to 50 K and even reverses its sign when the temperature is 80 K. The sign reversal indicates the quenching of WL at high enough temperatures, which is quite reasonable because the inelastic-scattering time, s, becomes comparable to the elastic-scattering time, at which point the phase coherence necessary for WL is destroyed. Contrary to the case of AlZnO 22 and BZnO 23 samples, we observe no evidence of the weak antilocalization effect (an excessive reduction of WL caused by spin-orbit scattering) for temperatures as low as 1.4 K, which suggests that the spin-orbit scattering time is significantly longer than the inelastic-scattering time in our MgZnO sample and thus can be neglected.…”

Section: A Weak Localizationcontrasting

confidence: 95%

“…This confirms the correctness of this B k method, which is really simple, and reconfirms the validity of Kawabata's three-dimensional WL theory. The values of L u in our sample are roughly an order of magnitude lower than that of heavily doped ZnO thin films, 22 almost the same as that of ZnO nanoplates 29 with a smaller changing rate with temperature and that of In-doped ZnO nanowires, 30 as a result of the low mobility of our sample. Moreover, as expected for the phase breaking by electron-electron collisions in disordered three-dimensional systems, 31,32 the temperature dependence of L u scales as T À3=4 , which is evidenced by the fitting result of our sample shown in Fig.…”

Section: A Weak Localizationmentioning

confidence: 55%

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Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

Wang

et al. 2015

Journal of Applied Physics

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Room temperature enhanced positive magnetoresistance in Pt and carrier induced Zn(Fe)O and Zn(Fe,Al)O dilute magnetic semiconductors junction A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn 1 − x Mn x O thin films grown on c -Al 2 O 3We comprehensively investigate magnetotransport properties of MgZnO thin film grown on ZnO substrate by molecular-beam epitaxy. We measure the weak localization effect and extract the electron phase coherence length by fitting to a three-dimensional weak localization theory and by analyzing the different changing rate of the magnetoresistance, results of which are in good agreement with each other. The phase coherence length ranges from 38:461nm at 50 K to 99:863:6 nm at 1:4K, almost the same as that of ZnO nanoplates and In-doped ZnO nanowires, and its temperature dependence is found to scale as T À3=4 . Meanwhile, we study the anisotropic magnetoresistance resulting from the geometric effect as well as the Lorentz force induced path-length effect, which will be enhanced in higher magnetic fields. V C 2015 AIP Publishing LLC.

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Section: A Weak Localizationcontrasting

confidence: 95%

Section: A Weak Localizationmentioning

confidence: 55%

Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

Wang

et al. 2015

Journal of Applied Physics

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“…According to H. J. Kim [21], incorporated hydrogen makes the defects just below the CBM of a-IGZO thin film, which leads to ∆V th shift under LNBTS. Furthermore, V th shift under LNBTS test often makes hump phenomena, which can be explained by the introduction of defect formed just below the CBM [14], [22], [23].…”

Section: Discussionmentioning

confidence: 99%

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Okuno

Tao

Morita

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe have investigated the microwave-detected photoconductivity responses from the amorphous In-Ga-Zn-O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay (µ-PCD). It is concluded that the µ-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication. key words: oxide semiconductor, thin film transistor, microwave-detected photoconductivity decay, in-line process monitoring

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“…Recently, the hump effect in the subthreshold regions of transfer curves for TFTs has been steadily studied by many research groups. The hump effect occurs in not only conventional silicon‐based TFTs but also AOS TFTs, such as a‐IGZO, ZnO, and HIZO . It is well known that the hump effect occurs under various stability tests.…”

Section: Introductionmentioning

confidence: 99%

“…Tsai et al suggested that the hump is related to the defects at the channel–SiO x passivation layer interface in plasma‐treated IGZO TFTs . Kwon et al reported that the hump effect occurs in HIZO TFTs under NBIS, and attributed it to the photogenerated hole trapping in a gate insulator . However, the hump effect in oxide TFTs is not clearly explained.…”

Section: Introductionmentioning

confidence: 99%

Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress

Lee

2018

Physica Status Solidi (a)

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In this study, amorphous silicon-zinc-tin-oxide thin film transistors (a-SZTO TFTs) are fabricated by radio-frequency magnetron sputtering at room temperature, and the influence of various channel thicknesses on their electrical performance and stability is report. Under the negative bias temperature stress, the transfer curve exhibits threshold voltage shift in the negative direction and degradation of subthreshold swing. In addition, the hump effect occurs in the thick channel, which is primarily due to an increase in total trap density from 5.0 Â 10 11 to 3.5 Â 10 12 cm À2 with an increase in the channel layer thickness from 12 to 72 nm. These results agree well with the increase in the bulk trap density because all a-SZTO TFTs have the same interface; therefore, the interface trap density is excluded. Thicker SZTO TFTs show the hump effect, as they have more donor-like states in the shallow level. Furthermore, temperature stress at 300-333 K and the activation energy (E a ) falling rate are calculated for a-SZTO TFTs. The E a falling rate decreases from 0.103 to 0.010 eV V À1 with increasing channel thickness. Consequently, an a-SZTO TFT with a 12-nm channel layer thickness shows a large E a falling rate (0.103 eV V À1 ) and a small threshold voltage shift of 4.74 V without the hump effect and degraded electrical performance.

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Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor

Cited by 31 publications

References 27 publications

Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress

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