2007
DOI: 10.1063/1.2709632
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Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance

Abstract: The light-emission and current-voltage properties of n-type nanoporous silicon ͑n-NPS͒ with a hole assistance of buried p layer are explored. The influences of anodic current density on the formation, morphology, and properties of n-NPS are measured. Such n-NPS films have nanoscaled pores and high-aspect-ratio pillars. Since the anisotype junction is forward biased during the anodization process, many holes can drift straightupward from p layer and participate in the electrochemical reaction. At room temperatu… Show more

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Cited by 10 publications
(8 citation statements)
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“…However, the magnified cross-sectional view of such a pore supports the above claim like the one presented in the inset of figure 1(a) in our previous publication [25]. Taking into account all the aforementioned facts, we can justify the pore growth mechanism in this study as follows: short and tissue like pore branching often occurs during ECE in the presence of isotropic photoexcited holes [20] up to a limited depth. This is also accompanied by a continuous reduction of the chemical reaction due to lowering of the concentration of HF electrolyte inside a pore, and as a matter of fact, slows down the etching process by removing species, produced during the etching process in the form of bubbles along the pore walls [26][27][28].…”
Section: Resultssupporting
confidence: 88%
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“…However, the magnified cross-sectional view of such a pore supports the above claim like the one presented in the inset of figure 1(a) in our previous publication [25]. Taking into account all the aforementioned facts, we can justify the pore growth mechanism in this study as follows: short and tissue like pore branching often occurs during ECE in the presence of isotropic photoexcited holes [20] up to a limited depth. This is also accompanied by a continuous reduction of the chemical reaction due to lowering of the concentration of HF electrolyte inside a pore, and as a matter of fact, slows down the etching process by removing species, produced during the etching process in the form of bubbles along the pore walls [26][27][28].…”
Section: Resultssupporting
confidence: 88%
“…The hole-rich p-type Si has mostly been used in previous studies on PS, where the current density (J ) is correlated with the accumulation of holes in the adjacent region of HF electrolyte and Si atoms. On the other hand, synthesis of PS in n-type Si is difficult as compared with p-type Si due to the lack of holes, and therefore illumination is inevitable in creating photoexcited holes to promote pore formation, depending on distance sensitive illumination intensity [20]. Prior investigation reveals that surface atoms are mostly photoexcited under illumination, whereas the anodization process is significantly suppressed in deep layers [20].…”
Section: Methodsmentioning
confidence: 99%
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“…The first was implantation to convert the backside of the substrate to p-type, which was apparently sufficient to supply enough holes for silicon dissolution at the front interface. [21] The second technique was to use the Hall effect, that is, application of perpendicular electric and magnetic fields, to drive holes to the silicon/HF interface. [22] However, these techniques suffer disadvantages in the form of difficulties in either their sample preparation technique, lack of ease in experimental arrangement, or control over the PSi formation rate.…”
mentioning
confidence: 99%
“…This problem can be avoided by using backside illumination [3]. Furthermore, recent reports show that holes can be generated at the n-type Si/solution interface without illumination using either modified substrates (with a p-type backside region) [26], or Hall effect [27], or lateral potential fields [28]. Illumination is not required for heavily doped n-type Si because holes can be generated at the Si/electrolyte interface by a tunneling effect through the narrow space charge region of the Si substrate.…”
Section: Effect Of Anodization Conditionsmentioning
confidence: 99%