2024
DOI: 10.31857/s0023476124040214
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Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption

R. А. Salii,
A. V. Malevskaya,
D. А. Malevskii
et al.

Abstract: IR light-emitting diodes based on InGaAs/AlGaAs multiple quantum wells and AlxGa1–xAsyP1–y-layers that compensate stresses in the active region have been developed. The optical losses caused by absorption of radiation generated by the active region (λ = 940 nm) were studied at different doping levels of n-GaAs substrates. It has been shown that reducing the donor doping level from 4 × 1018 to 5 × × 1017 cm–3 gives an increase in the quantum efficiency of LEDs by ~ 30%. A technology that eliminates optical loss… Show more

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