Lightâemitting transistors (LETs) have attracted a significant amount of interest as multifunctional building blocks for nextâgeneration electronics and optoelectronic devices. However, it is challenging to obtain LETs with a high carrier mobility and uniform lightâemission because the semiconductor channel should provide both the electrical charge transport and optical lightâemission, and typical emissive semiconductors have low, imbalanced carrier mobilities. In this work, a novel device platform that adapts the electrochemiluminescence (ECL) principle in LETs, referred to as an ECL transistor (ECLT) is proposed. ECL is a lightâemission phenomenon from electrochemically excited luminophores generated by redox reactions. A solidâstate ECL electrolyte consisting of a networkâforming polymer, ionic liquid, luminophore, and coâreactant is employed as the lightâemitting gate insulator of the ECLT. Based on this construction, highâperformance LETs that make use of various conventional nonâemissive semiconductors (e.g., poly(3âhexylthiophene), zinc oxide, and reduced graphene oxide) are successfully demonstrated. All the devices exhibit a high mobility (0.9â10 cm2 Vâ1 sâ1) and a uniform lightâemission. This innovative approach demonstrates a novel LET platform and provides a promising pathway to achieve significant breakthroughs to develop electronic circuits and optoelectronic applications.