Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

Abstract

Quantum dots photonic devices based on the III–V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

“…An ICP and RF power of 400 and 5 W were used. More detailed information about NBE etching can be found in previous studies . The ICP etching was performed using a commercial ICP machine (Samco, RIE‐400iPS).…”

“…Samukawa and coworkers developed a novel defect‐free etching technique for semiconductor materials, that is, the neutral beam etching (NBE) technique . The neutral beam suppresses the incidence of charged particles and UV photon radiation onto the substrate, and is able to expose the substrate only to energy‐controlled neutral beam.…”

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

“…At present, researchers have developed all kinds of nanostructures as light-trapping structures to increase light absorption in photovoltaics, while most of them were performed on Si substrate [2][3][4][5][6]. III-V compound semiconductor nanostructures have been shown to be promising materials for a variety of optoelectronic and energy-related applications such as light-emitting diodes (LEDs) [7,8], photovoltaics (PV) [9][10][11][12] and field effect transistors (FETs) [13][14][15][16]. GaAs is a promising candidate as its direct bandgap and absorption property [17,18].…”

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

“…Owing to its unique optical properties,light trapping structure plays a more and more important role in photovoltaic devices [1] At present researchers have developed all kinds of nanostructures as light trapping structures to increase light absorption in photovoltaics while most of them were performed on Si substrate [2][3][4][5][6]. III-V compound semiconductor nanostructures have been shown to be promising materials for a variety of optoelectronic and energy related applications such as light emitting diodes (LEDs) [7,8], photovoltaics (PV) [9][10][11][12] and eld effect transistors (FETs) [13][14][15][16] GaAs is a promising candidate as its direct bandgap and absorption property [17,18]. When incident light enters the nanostructure, the photons will undergo multiple re ections and refracts inside the structure and get trapped in the array, which is the trapping effect of nanostructure.…”