Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

Rückschloß, M.; Landkammer, B.; Vepřek, S.

doi:10.1063/1.109660

Cited by 92 publications

(28 citation statements)

References 26 publications

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“…[127] annealing. [132] It should be noted that nc-Si is commonly produced by ion implantation, [133] electrochemical etching, [134] and chemical vapor deposition, [135] all of which are suitable for low-dimensional nanostructures such as porous Si and Si dots. It is important to emphasize that the nano-grained semiconductors were obtained in bulk form by virtue of HPT.…”

Section: Mg and Mgmentioning

confidence: 99%

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Valiev

Estrin

Horita

et al. 2015

Materials Research Letters

302

136

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Bulk nanoSPD materials are materials with nanostructural features, such as nanograins, nanoclusters, or nanotwins, produced by severe plastic deformation (SPD) techniques. Such nanostructured materials are fully dense and contamination free and in many cases they have superior mechanical and functional properties. Here, we provide a critical overview of such materials, with a focus on the fundamentals for the observed extraordinary properties. We discuss the unique nanostructures that lead to the superior properties, the underlying deformation mechanisms, the critical issues that remain to be investigated, future research directions, and the application potential of such materials.

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Section: Mg and Mgmentioning

confidence: 99%

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Valiev

Estrin

Horita

et al. 2015

Materials Research Letters

302

136

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show abstract

“…Several techniques for making nc-Si have been explored, including gas-phase production via the thermal decomposition of silanes 2,3 and microwave plasma decomposition of silane, 4 Si deposition in the presence of large partial pressures of hydrogen, 5,6 spark ablation of c-Si surfaces, 7 laser and thermal crystallization of amorphous silicon/silicon nitride layers, 8 and Si-rich oxide layers. 9,10 Studies of the materials produced by these techniques have shown that nc-Si does luminesce strongly in the red on the microsecond time scale, and sometimes blue 11 on the nanosecond time scale, 12 when successfully passivated to minimize rapid nonradiative surface recombination.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence properties of silicon quantum-well layers

Saeta

Gallagher

1997

Phys. Rev. B

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Nanometer-scale crystal silicon films surrounded by SiO 2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX ͑separation by implantation of oxygen͒ and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (Ͻ2 nm͒, all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ϳ35 s at room temperature and ϳ54 s at 88 K; the decay was nonexponential and did not exhibit spectral diffusion. Atomic force microscope images of the silicon layers showed that luminescing layers were broken apart into regions ϳ50-100 m in diameter, suggesting that luminescence comes only from regions small enough to have no nonradiative recombination centers in the band gap. These results are inconsistent with a simple quantum-confinement model for luminescence in two-dimensional silicon and suggest the importance of radiation from surface states. ͓S0163-1829͑97͒02704-5͔

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“…The sample preparation was described in our earlier papers [1,2,[15][16][17]. Thus only a brief summary is given here.…”

Section: Methodsmentioning

confidence: 99%

Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO₂Doped with Transition Metals

et al. 1996

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The nc-Si/a-Si0 2 composite thin films doped with tungsten show very fast and efficient photoluminescence (PL). In order to obtain insight into the PL mechanism we have performed a comparative study with other metals. The results lend support to the suggested mechanism which includes the photogeneration of charge carriers due to efficient absorption of the excitation UV light in the silicon nanocrystals followed by energy transfer to the W"+ radiative center from which the light emission occurs.

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Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

Cited by 92 publications

References 26 publications

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Photoluminescence properties of silicon quantum-well layers

Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO₂Doped with Transition Metals

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Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

Cited by 92 publications

References 26 publications

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Fundamentals of Superior Properties in Bulk NanoSPD Materials

Photoluminescence properties of silicon quantum-well layers

Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO2Doped with Transition Metals

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Product

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Possible Mechanism of the 30–100 Picoseconds Fast and Efficient Photoluminescence From nc-Si/a-SiO₂Doped with Transition Metals