Light Emitting Silicon for Microphotonics

Ossicini, Stefano; Pavesi, L.; Priolo, F.

doi:10.1007/b13588

Cited by 290 publications

(259 citation statements)

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“…Furthermore, in the electronic industry these wide band gap materials are being considered for alternative gate oxides 1 and in the field of integrated optics they provide low-loss dielectric waveguides 2 . Recently the subject of wide bandgap oxides and nitrides have gained interest within the context of nanocrystals which offer silicon-based technology for light emitting devices and semiconductor memories 3 . These nanocrystals are embedded in an insulating matrix which is usually chosen to be silica 4,5,6,7 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO2, GeO2, Al 2O3, Si3N4, and Ge3N 4. Their important polymorphs are considered which are for SiO 2: α-quartz, α- and β-cristobalite and stishovite, for GeO2: α-quartz, and rutile, for Al2O 3: α-phase, for Si3N4 and Ge 3N4: α- and β-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving ab initio pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO2. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si3N4 and Ge3N4. © Springer Science+Business Media, LLC 2007

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Section: Introductionmentioning

confidence: 99%

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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“…1 The anodic technique has been used for several decades now and has proved to be a useful nanofabrication tool in the synthesis of porous structures. [2][3][4] Like silicon, compound semiconductors such as GaP and GaAs have been investigated in the form of porous structures and many different properties relative to those of bulk materials have been reported. For instance, UV and visible emissions have been observed in the porous layers of GaP, [5][6][7] GaAs, 8,9 and InP.…”

Section: Introductionmentioning

confidence: 99%

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Tomioka

Adachi

2005

Journal of Applied Physics

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The structural and optical properties of porous GaP have been studied by scanning electron microscopy, spectroscopic ellipsometry, and photoluminescence ͑PL͒ spectroscopy. Porous GaP layers were fabricated by anodic etching in HF : H 2 O:C 2 H 5 OH=1:1:2 electrolyte on n-type ͑100͒ and ͑111͒A substrates. The morphology of the porous GaP layer is found to depend strongly on the surface orientation. Apart from the red emission band at ϳ1.7 eV, a supra-band-gap ͑E g X ͒ emission has been clearly observed on the porous GaP ͑111͒A sample. The anodic porous layer on the ͑100͒ substrate, on the other hand, has shown only the red emission at 300 K and both red and green donor-acceptor pair emissions at low temperatures. The correlation between the PL properties and the porous morphology is discussed. An optical transition model is also proposed for the explanation of the PL emission properties of the porous GaP samples.

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“…1 An important challenge pervading solid-state physics is the problem of understanding the optical properties of a material in terms of its fundamental properties. Quantum confinement is the first model proposed to explain visible photoluminescence ͑PL͒ from porous silicon ͑PSi͒.…”

Section: Introductionmentioning

confidence: 99%

“…2 Afterwards, many other alternative models were proposed: ͑1͒ hydrogenated amorphous silicon model, ͑2͒ surface hydride model, ͑3͒ defect model, ͑4͒ siloxene model, and ͑5͒ surface state model. 1,3 Except for the quantum confinement model, all the others assume an extrinsic origin for PSi luminescence.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

Adachi

2007

Journal of Applied Physics

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The optical properties of porous silicon ͑PSi͒ photoetched in aqueous HF/ I 2 solution are investigated using spectroellipsomety ͑SE͒, electroreflectance ͑ER͒, photovoltage ͑PV͒, photoconductivity ͑PC͒, photoluminescence ͑PL͒, and Fourier transform infrared ͑FTIR͒ spectroscopy. The PSi layers were formed in a HF/ I 2 solution on n-Si substrates under Xe lamp illumination. The SE ͑E͒ and related data show an interference oscillation in the region below E ϳ 3 eV, where the PSi material is nearly transparent. The PV and PC spectra reveal three individual peaks A, B, and C at ϳ1.2, ϳ1.7, and ϳ2.5 eV, respectively, arising from the PSi layer itself. Peak C is also observed in the ER spectrum, together with a broadened E 1 peak at ϳ3.4 eV. Change in the fundamental-absorption-edge nature ͑E g X ͒ from the indirect gap in crystalline silicon to the quasidirect gap in PSi is found in the PV and PC spectra. The PL spectrum shows a broad peak at ϳ2.0 eV͑B͒. Peaks A, B, and C observed in the PSi layer may originate from the nondirect optical transitions at and above the lowest absorption edges E g X ͑A and B͒ and E g L ͑C͒. The quantum-mechanical size effect, i.e., a relaxation of the momentum conservation, makes possible the nondirect or quasidirect transitions at and above E g X and E g L in porous materials. The FTIR data support that the PL emission is due to the surface-sensitive quantum confinement effect.

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Light Emitting Silicon for Microphotonics

Cited by 290 publications

References 0 publications

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF∕I2 solution

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