Light induced enhancement of minority carrier lifetime of chemically passivated crystalline silicon

Aouida, S.; Bachtouli, N.; Bessaı̈s, B.

doi:10.1016/j.apsusc.2013.03.029

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…The solid line represents an appropriate theoretical curve τ eff (SRV) plotted employing Eqs. (1) and (2). The bulk lifetime τ b = 115 µs used in plotting the curve was calculated from bulk parameters (see Table I).…”

Section: Resultsmentioning

confidence: 99%

“…The recombination activity can be reduced either through thin films deposition such as SiO x , Si x N y , Al 2 O 3 , a-Si:H and a-SiC:H or by formation of a floating N/P junction, or by immersion in chemical solution using hydrofluoric acid (HF) and iodine in ethanol or methanol (I-E or I-M) solution. The first kind of passivation techniques requires an important thermal budget that can't be avoided [2,3], accompanied by bulk properties modification more or less significant. Therefore, chemical passivation route seems to be fast, simple, not expensive and more adequate to inspect the bulk quality and then to predict the final solar cell efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

et al. 2016

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In this paper, we present an appropriate method of decoupling surface and bulk recombination processes in silicon wafers. The study was carried out using the surface passivation of multicrystalline silicon wafers by ethanolic solution of iodine at different molarities varying between 0.01 M and 0.1 M. The effect of the concentration of ethanolic iodine solution on surface passivation effectiveness was investigated by using quasi steady state photoconductance technique. Reproducible experiments have shown that the best passivation is reached for a molarity of around 0.02 M. The carrier lifetime after passivation at 0.02 M has been improved by more than one order of magnitude, compared to that of the same wafer before the passivation. Using an adequate modeling of minority carrier lifetime curves τ (∆n), based on Hornbeck-Haynes model, surface recombination velocity was calculated.The minimum values of surface recombination velocity have been found to be approximately 120 cm/s for 0.02 M. The modeling results indicate that the minority carrier lifetime improvement can be easily correlated with the decrease of the surface recombination velocity for a fixed bulk lifetime τ b = 115 µs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

et al. 2016

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“…This is possible by passivating the surfaces. In this work, a bare silicon sample was chemically passivated using Iodine-Ethanol solution [37].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

et al. 2018

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In this work, we report on the passivation of porous silicon (PS) by tungsten trioxide (WO 3 ) nanostructured thin films deposited via dip-coating of PS in tungsten hexachloride and water/ethanol solution. Structural analysis by Fourier transform infrared spectroscopy showed a partial disappearance of SiH x and Si-O-Si peaks after WO 3 thin film deposition on the PS due to the replacement of H atoms by WO 3 . Additionally, PS/WO 3 sample revealed weakly intense peaks which can be ascribed to O-W-O and W=O bridging bonds. Morphological analysis by atomic force spectroscopy showed the coverage of the PS surface by a nanostructured thin film of dense WO 3 nanoparticles with a size ranging from 40 to 60 nm. The photoluminescence signal intensity of PS/WO 3 samples presents a continuous increase as a function of the immersion time in the precursor solution. This is attributed to a better decoration of the PS surface by WO 3 nanoplatelets and a decrease of surface recombination velocity (200 x 10 2 cm/s for untreated silicon, 137 x 10 2 cm/s for PS and 99 x 10 2 cm/s for PS/WO 3 samples). Hence, a ~ 50 % improvement in the effective lifetime of minority carriers is obtained.Moreover, the deposited WO 3 contributed not only to the passivation of PS, but acted as an antireflection layer which enhanced the optical properties of PS by reducing the reflection of light. These obtained results confirmed the benefits of using WO 3 thin film as passivation/antireflection coating for possible solar cell application.

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Time and light-dependence of electrical passivation of c-Si surfaces with quinhydrone constituent solutions

Kotulak

Chen

Schreiber

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Light induced enhancement of minority carrier lifetime of chemically passivated crystalline silicon

Cited by 4 publications

References 4 publications

Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

Time and light-dependence of electrical passivation of c-Si surfaces with quinhydrone constituent solutions

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