Light-induced off-diagonal thermoelectric effect via indirect optical heating of incline-oriented Ca<i>x</i>CoO2 thin film

Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

doi:10.1063/1.4711020

Cited by 13 publications

(9 citation statements)

References 15 publications

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“…The voltage signals are believed to arise from the off-diagonal term of the Seebeck tensor along the thin film surface, which is present in the anisotropic layered materials when an inclined crystal orientation is constructed [2,3]. This laser-induced thermoelectric voltage (LITV) effect has the specifics that a temperature gradient applied along the film normal direction gives rise to a transverse voltage signals along the film in-plane direction [4][5][6][7] and has been applied in the light-detection devices with advantages of fast time and broad spectral response, operating at room temperature but no bias required [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…These tilted thin films are referred to ALT materials, and the LITV response can be optimized by tailoring the film thickness and the inclined crystal orientation [6,7,11]. LITV signals have been detected in several cuprates [4][5][6][7][8][9][10][11][12][13][14][15] which are correlated with the perovskites of Ruddlesden-Popper family [16], since the layered structures can cause different transport properties in various atomic layers and then large anisotropic thermopower DS, a key factor to LITV effect [2,5]. LITV signals are observed scaling to the resistance of thin films [17], and the doping dependence always shows the same behaviors as the change in DS upon the charge carrier density [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

et al. 2015

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Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd 2-x Ce xCuO 4 thin films grown on the vicinal-cut SrTiO 3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

et al. 2015

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“…This effect relies on the longitudinal temperature difference, perpendicular to the material surface. Under short-pulse laser illumination, it has relatively high responsivity, while for CW excitation, the responsivity is extremely low 35,36 .…”

Section: Introductionmentioning

confidence: 99%

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

2019

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The self-powered and ultra-broadband photodetectors based on photothermoelectric (PTE) effect are promising for diverse applications such as sensing, environmental monitoring, night vision and astronomy. The sensitivity of PTE photodetectors is determined by the Seebeck coefficient and the rising temperature under illumination. Previous PTE photodetectors mostly rely on traditional thermoelectric materials with Seebeck coefficients in the range of 100 μV K−1, and array structures with multiple units are usually employed to enhance the photodetection performance. Herein, we demonstrate a reduced SrTiO3 (r-STO) based PTE photodetector with sensitivity up to 1.2 V W−1 and broadband spectral response from 325 nm to 10.67 μm. The high performance of r-STO PTE photodetector is attributed to its intrinsic high Seebeck coefficient and phonon-enhanced photoresponse in the long wavelength infrared region. Our results open up a new avenue towards searching for novel PTE materials beyond traditional thermoelectric materials for low-cost and high-performance photodetector at room temperature.

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“…By contrast, the photoresponse of Ca x CoO 2 thin ($100 nm thick) films with an off-diagonal TE effect were designed to be very fast ($10 ns), but the conversion is very inefficient. 24 In the present study, we have demonstrated fast response mechanism and speeds up to 6.4 KHz or 25 ls were achieved. According to our thermal model, the TE response is limited in speed only by thermal diffusion through the optical penetration length A.…”

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confidence: 71%

Photoresponse in arrays of thermoelectric nanowire junctions

Huber

Scott

Johnson

et al. 2013

Applied Physics Letters

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We report the first demonstration of optical detection by thermoelectric nanowire junctions. We employed devices composed of bismuth nanowire arrays which are capped with a transparent indium tin oxide electrode. The incident surface features very low optical reflectivity and enhanced light trapping. The unique attributes of the thermoelectric arrays are the combination of strong temporal and optical wavelength dependences of the photocurrent. Under infrared illumination, the signal can be completely described by thermoelectric effects considering cooling rates given by heat diffusion through the array. In addition, under visible illumination, we observe a photovoltaic response.

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Light-induced off-diagonal thermoelectric effect via indirect optical heating of incline-oriented CaxCoO2 thin film

Abstract: Articles you may be interested inOptical and mechanical mode tuning in an optomechanical crystal with light-induced thermal effects

Cited by 13 publications

References 15 publications

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

Photoresponse in arrays of thermoelectric nanowire junctions

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