Light-induced order-of-magnitude decrease in the electric field for domain nucleation in MgO-doped lithium niobate crystals

Sones, C.L.; Wengler, Marc; Valdivia, Christopher E.; Mailis, S.; Eason, R.W.; Buse, K.

doi:10.1063/1.1929099

Cited by 45 publications

(23 citation statements)

References 18 publications

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“…[6][7][8][9] In this paper, however, a different effect is presented whereby illumination of the +z face with UV light at = 244 nm ͑with photon energy greater than the LN band gap͒ inhibits domain inversion in illuminated areas during subsequent electric field poling ͑EFP͒. Of major importance, the inhibited domains are not restricted in their shape or alignment with the crystal x or y axes, hence, arbitrarily shaped domains can be formed.…”

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Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

Sones

Muir

Ying

et al. 2008

Applied Physics Letters

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Continuous wave ultraviolet laser irradiation at = 244 nm on the +z face of undoped and MgO doped congruent lithium niobate single crystals has been observed to inhibit ferroelectric domain inversion. The inhibition occurs directly beneath the illuminated regions, in a depth greater than 100 nm during subsequent electric field poling of the crystal. Domain inhibition was confirmed by both differential domain etching and piezoresponse force microscopy. This effect allows the formation of arbitrarily shaped domains in lithium niobate and forms the basis of a high spatial resolution microstructuring approach when followed by chemical etching. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2884185͔ Domain engineering 1,2 of lithium niobate ͑LN͒ is a subject of extensive research and a simple, cheap, and robust method of fabrication of well-defined periodic domaininverted structures on submicron scales is highly desirable. Spatial domain engineering is used for many optical processes in bulk crystals and waveguides and can also allow for the creation of both freestanding 3 and surface relief structures 4 through the differential etching characteristics of the polar z faces of the crystal. If achievable on the submicron scale, surface structuring through differential etching will allow the implementation of a range of interesting applications such as tunable photonic crystals, ridge waveguide lasers, and multifunctional micromachines.Previous work has shown that ultraviolet ͑UV͒ and visible laser light can either directly invert 5 or assist the domain inversion process in LN. [6][7][8][9] In this paper, however, a different effect is presented whereby illumination of the +z face with UV light at = 244 nm ͑with photon energy greater than the LN band gap͒ inhibits domain inversion in illuminated areas during subsequent electric field poling ͑EFP͒. Of major importance, the inhibited domains are not restricted in their shape or alignment with the crystal x or y axes, hence, arbitrarily shaped domains can be formed. Some initial results of this effect and its applicability in the creation of micro/nano structures in LN are presented.A beam from a frequency-doubled Ar-ion laser was focused to a spot size of ϳ2.5 m on the +z or −z face of either an undoped congruent or 5 mol % MgO-doped LN crystal. Positioning and exposure control of the crystal was achieved by a computer-controlled, three-axis stage system coupled with a mechanical shutter.For dynamic exposures, sets of parallel lines were drawn on the z faces of the crystals along the crystallographic x or y directions by moving the stages at speeds ranging from 0.05 to 0.3 mm s −1 . For static exposures, arrays of illuminated spots with identical exposure times, ranging from a few milliseconds to a few tens of seconds, were formed. The separation between the edges of adjacent illuminated spots in the arrays varied from 0 to 6 m which permitted us to verify if any proximity effect existed such as that observed in pulsed laser direct poling 5 where the closest approa...

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“…The samples were then poled using the EFP setup described in Ref. 6. The voltage was ramped at 2 kV/ min to a value of ϳ10.1 kV, corresponding to an electric field of 20.2 kV/ mm across the 0.5 mm thick sample.…”

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Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

Sones

Muir

Ying

et al. 2008

Applied Physics Letters

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“…Domain engineering was achieved either by polinginhibition [10] or light-assisted poling [11], both methods being able to produce inverted domains of limited (few µm scale) depth. The domain engineering methods were applied to E.U.…”

Section: A Domain Engineering and Hf Etchingmentioning

confidence: 99%

LiNbO3 Whispering-Gallery Mode Micro-Resonator

Ying

Murugan

Brambilla

et al. 2011

2011 Symposium on Photonics and Optoelectronics (SOPO)

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Abstract-Lithium niobate micro-resonators have been fabricated by surface tension reshaping of pre-defined surface microstructures produced at temperatures close to the melting point. Surface-tension-reshaping produced micro-resonator structures with ultra-smooth side surfaces while maintaining the useful crystalline properties. Preliminary optical characterisation on non-optimized structures yielded a Q factor of 5600 at a free spectral range of 4.55nm.

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“…12,13 The laser-induced reductions of nucleation fields in Mg-doped LiNbO 3 by the focused visible light have been reported. [14][15][16] The ultraviolet-infrared laser-induced domain inversion in MgO-doped congruent LiNbO 3 were systematically investigated. 17 Yet, the high threshold of nucleation field (usually 5 mol% MgO for congruent LiNbO 3 ) and the large distribution coefficient, make it difficult to grow crystals with good optical quality and to obtain periodically poled samples as well 18 In this study, we presented the experimental results concerning the laser-induced preferential domain nucleation in hafnium-doped lithium niobate crystal.…”

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Laser-induced preferential domain nucleation in hafnium-doped congruent LiNbO 3 crystal

Hou

Zhi

Yan

et al. 2009

Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III

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The instantaneous preferential domain nucleation effect of the z-cut hafnium-doped congruent LiNbO 3 crystal is investigated. The beam from an Ar-ion laser with 514 nm wavelength is focused on z surface. Two incidence schemes are performed: (1) irradiating near and focusing on the +z surface; (2) irradiating near and focusing on the -z surface. The digital holographic interferometry is used in investigating the visible laser-induced domain nucleation in hafnium-doped congruent LiNbO 3 crystal, and reconstructs the phase shift of new domain. From the investigation of phase shift induced by the domain inversion, the analysis of domain nucleation is performed. When the electric field exceeds a certain threshold value, the preferential domain nucleation is achieved instantaneously at the focal spot during the combined actions of irradiation and external fields. The nucleation fields have a systematic decrease with increasing laser intensity, and reach an effective saturation at higher intensities. The reduction proportions obtained in the second scheme are lower than those in the first one with the same intensity, and the saturation values at higher intensities are the same in both schemes. We attribute the instantaneous effect of laser-induced domain nucleation to the space charge field, and the saturation value at higher intensities is related to the saturation of the space charge field. The formation of instantaneous effect and corresponding physical explanation based on space charge field are present.

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Light-induced order-of-magnitude decrease in the electric field for domain nucleation in MgO-doped lithium niobate crystals

Cited by 45 publications

References 18 publications

Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

LiNbO3 Whispering-Gallery Mode Micro-Resonator

Laser-induced preferential domain nucleation in hafnium-doped congruent LiNbO 3 crystal

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