Light‐Induced Reversible Control of Ferroelectric Polarization in BiFeO<sub>3</sub>

Yang, Ming-Min; Alexe, Marin

doi:10.1002/adma.201704908

Cited by 136 publications

(127 citation statements)

References 28 publications

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“…Significantly, we observed a switchable photocurrent for this two‐terminal α‐In 2 Se 3 memristor (Figure g), which provides another degree of freedom for using light to control the conducting path of the device and further construct nonvolatile photomemories. The photocurrent in ferroelectric α‐In 2 Se 3 memristor arises from the separation of photogenerated electron–hole pairs, rather than noncentrosymmetry induced bulk photovoltaic effect in conventional oxide ferroelectrics . It is reported that the incident‐light‐induced thermal effect in α‐In 2 Se 3 can be ignored due to the tiny temperature gradient (0.1 K) under a large power density of 100 W cm −2 .…”

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confidence: 63%

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

et al. 2019

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Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α‐In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in‐plane (IP) polarization of α‐In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. The integration of vertical α‐In2Se3 memristors based on out‐of‐plane (OOP) polarization is demonstrated with a device density of 7.1 × 109 in.−2 and a resistance‐switching ratio of well over 103. A multidirectionally operated α‐In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α‐In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.

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confidence: 63%

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

et al. 2019

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“…Importantly, it has been reported that a change in short‐circuit current can cause charge injection leading to the tuning of the coercive field . The maximum electric field associated with induced current injection can be calculated using the following equation

E_{\max} = 0.4 {(\frac{I_{normalSC}}{π θ μ ε_{0} ε_{r}})}^{1 / 2} {(\frac{1}{r})}^{1 / 2}

…”

Section: Resultsmentioning

confidence: 99%

Optical Control of Ferroelectric Domains: Nanoscale Insight into Macroscopic Observations

Vats

Bai

Zhang

et al. 2019

Advanced Optical Materials

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has been investigated for the optical reading of ferroelectric random-access memories, [14,15] photodiodes, [16] and photovoltaic [4,[17][18][19][20][21][22][23] applications. Current research is focused on developing band-gap tuned ferroelectric materials as their performance is restricted by low mobility of charge carriers and short diffusion lengths. [24][25][26] Band-gap tuned ferroelectric materials are capable of hosting multiple functionalities (due to ferroelectricity and semiconducting features), which suggest the possibilities of multiple energy conversions (piezoelectric, pyroelectric, and photovoltaic) simultaneously. In this context, Bai et al. synthesized a novel band-gap (1.6 eV down from >4 eV) engineered lead-free ferroelectric composition, i.e. (K 0.5 Na 0.5 )NbO 3 -2 mol% Ba(Ni 0.5 Nb 0.5 )O 3−δ (KNBNNO or KNN-BNNO), and demonstrated multiple functionalities (piezoelectric, pyroelectric, and photovoltaic effects) and their cumulative effect using this single material. [27][28][29] (K 0.5 Na 0.5 )NbO 3 supports off-center distortion and is responsible for ferroelectric nature of KNN-BNNO while Ba(Ni 0.5 Nb 0.5 ) O 3−δ controls the electronic states in the gap of parent (K 0.5 Na 0.5 ) NbO 3 using oxygen vacancies and Ni +2 ions. [24] Simultaneous presence of ferroelectric and semiconducting features makes this composition alluring for photovoltaic applications. In addition, it also provides an opportunity to understand how ferroelectric properties in semiconductors could help in improving the photovoltaic response and vice versa. In this context, the present study aims to provide an insight into light-induced changes in the ferroelectric behavior of KNN-BNNO. Recent demonstration of light-driven switching of nanodomains in (K 0.5 Na 0.5 )NbO 3 also makes it interesting to further explore KNN-BNNO. [30] Light-induced changes in ferroelectrics could persist due to a number of reasons such as (i) localized heating assisted diffusion of alkali element (as in LiNbO 3 ) and oxygen vacancies, [31] (ii) change in oxidation state of the central atom (e.g., in BaTiO 3 ), [32] and (iii) Jahn-Teller distortions due to light-induced pyroelectric current or charge injection in the conduction band (as in SbSI). [7,13] Warren et al. suggested that similar to electrical and thermal fluctuations, an exposure to light involves "locking domains by electronic charge trapping at domain boundaries." [1] Any change in the macroscopic behavior could be attributed to nanoscale changes in the ferroelectric domains. Moreover, Domain wall nanoelectronics constitutes a potential paradigm shift for nextgeneration energy conversion and von-Neumann devices. In this context, attempts have been made to achieve energy-efficient control over ferromagnetic, ferroelectric, and ferroelastic domain walls through electric and magnetic fields or applied stress. However, optical control of ferroic domains offers an additional degree of freedom and significant advantages of reduced hysteresis and Joule heating losses, creating novel opport...

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“…Several non‐centrosymmetric perovskites are also ferroelectric in nature. “A ferroelectric material is a material that exhibits, over some range of temperature, a spontaneous electric polarization that can be reversed or reoriented by application of an electric field (as illustrated in Figure b,c).” The spontaneous polarization of several ferroelectrics can also be reversibly switched by application of stress, uniform heating/cooling, or light . The phenomena of achieving a change in polarization by means of uniform heating or cooling is known as the “pyroelectric effect” while a change in polarization by exposure to light and stress is termed as “photoferroic effect” and “piezoelectric effect,” respectively.…”

Section: Introductionmentioning

confidence: 99%

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

et al. 2019

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An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganicorganic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects. His current research focuses on developing functional inorganic−organic hybrid materials and energy conversion devices including perovskite solar cells.are found to have lower t-values (0.75 < t < 1.0). t-values help in governing and tuning the presence of ferroelectricity in perovskites [11] and are responsible for the transition temperatures in ferroelectrics. [57] In the case of hybrid inorganic-organic perovskites, the A-site and/or X-site ions are replaced by molecular building blocks; hence, the tolerance

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Light‐Induced Reversible Control of Ferroelectric Polarization in BiFeO₃

Cited by 136 publications

References 28 publications

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Optical Control of Ferroelectric Domains: Nanoscale Insight into Macroscopic Observations

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

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Light‐Induced Reversible Control of Ferroelectric Polarization in BiFeO3

Cited by 136 publications

References 28 publications

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Optical Control of Ferroelectric Domains: Nanoscale Insight into Macroscopic Observations

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

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Light‐Induced Reversible Control of Ferroelectric Polarization in BiFeO₃