Light-induced strain and its correlation with the optical absorption at charged domain walls in polycrystalline ferroelectrics

Concomitant Light-Reversible Magnetic Response in Multiferroic Oxide Heterostructures for Multiphysics Applications

“…The macroscopic deformation of the BaTiO 3 crystal originates from the collective motion of the ferroelectric domain walls, leading to a domain rearrangement when the material is exposed to light. 47 This marked deformation anisotropy provides an additional finding that the thermal contribution is residual since if it were a purely thermal effect, the Fe 3 O 4 /BaTiO 3 heterostructure would expand in all directions. Likewise, to provide further empirical support for the occurrence of ferroelectric domain switching, we conducted an analysis of the XRD pattern of BaTiO 3 under illumination conditions (∼30 mW).…”

“…In relative terms, the photostrain along the Y -axis is +0.006%, while the contraction along the X -axis is −0.004%. The macroscopic deformation of the BaTiO 3 crystal originates from the collective motion of the ferroelectric domain walls, leading to a domain rearrangement when the material is exposed to light . This marked deformation anisotropy provides an additional finding that the thermal contribution is residual since if it were a purely thermal effect, the Fe 3 O 4 /BaTiO 3 heterostructure would expand in all directions.…”

Physics-informed models of domain wall dynamics as a route for autonomous domain wall design via reinforcement learning

“…8 Such phenomena can lead to interesting properties, including changes in AC and DC conductance compared with the bulk, 1,9–11 significant contributions to static permittivity, 12 large extrinsic contributions to the piezo- and dielectric coefficients of ferroelectric ceramics, 13,14 and changes to opto-mechanical 15,16 ( e.g. , photostrictive 17 ) behaviors. The combination of the novel functionalities emerging at ferroic domain walls, and the fact that it is possible to control polarization orientation with the scanning probe of an atomic force microscope, 18,19 led to whole new areas including domain wall engineering and domain wall nanoelectronics.…”