Light-ion-beam-induced annealing of implantation damage in diamond

Abstract

The removal of defects in diamond by light-ion bombardment has been studied by means of Rutherford backscattering spectroscopy (RBS) channeling techniques. The damage produced by 1 × 1014 Sb ions cm−2 at 300 keV (below the critical dose for graphitization) was observed to diminish by as much as 50% under bombardment with H and He ions. The ion-beam-induced annealing has been studied as a function of ion dose and incident angle (channeling and random). Although the data sets differ markedly, they nearly coincide when the dose is normalized to the energy deposited by elastic collisions in the damaged region. This may indicate that nuclear and not electronic collisions contribute primarily to the in situ annealing in a reasonably good insulator such as diamond.

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

“…comprised of interstitial nitrogen surrounded by several vacancies. Electronic excitations, delivered by energetic light ions [31,32] or electrons [33], has been shown to aid repair of crystal damage and induce the dissociation of boron-deuterium pairs in diamond.…”

Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

“…where the detector thickness is just slightly larger than the a-particle range, the charge collection ratio is greater than unity at low fields (c l@ V/cm) and approaches unity asymptotically as the field increases beyond 0.5~105 V/cm. This behavior can be explained by assuming a shorter mean free path for electrons as compared to holes at low fields with the sum of the mean free paths for both carriers becoming large compared to 14.5 pm at the highest field. For the 25 pm thick detector, the charge collection ratio is well below unity at lower fields and approaches unity at the highest fields studied.…”

“…This expression calculates the effective contributions of acoustic and optical phonon scattering mechanisms with the factor, f, approaching the correct limit of 1 at large applied electric fields. The constants in the expression for the carrier velocity are expressed in terms of free electron mass, m, , and for diamond are c, =1.8x106 cm/sec [13] m: = 0.57m0 [14] ml= 1.2~2, [lS]…”

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

“…Further, our finding of NV formation by the passage of SHI in pre-implanted and pre-damaged diamond shows that NVcenters are probes of (partial) lattice damage recovery. Tracking of NVcenters and other color centers may be useful in studies of lattice damage and recovery dynamics in the interplay of elastic and inelastic energy loss process during irradiations [29][30][31]. Corresponding author contact information: T_Schenkel@lbl.gov, 510-486-6674…”