Light trapping structures for silicon solar cells via inkjet printing

Borojevic, Nino; Lennon, Alison; Wenham, Stuart

doi:10.1002/pssa.201330654

Cited by 16 publications

(15 citation statements)

References 23 publications

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“…An scanning electron microscope (SEM) image of the inverted pyramids is shown in Figure b. The reflectance values achieved by the structures can be further decreased when the pyramids are arranged in a “Tiler's pattern”, which has recently been demonstrated with the same inkjet process …”

Section: Texturizationmentioning

confidence: 81%

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Inkjet Technology for Crystalline Silicon Photovoltaics

et al. 2014

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The world's ever increasing demand for energy necessitates technologies that generate electricity from inexhaustible and easily accessible energy sources. Silicon photovoltaics is a technology that can harvest the energy of sunlight. Its great characteristics have fueled research and development activities in this exciting field for many years now. One of the most important activities in the solar cell community is the investigation of alternative fabrication and structuring technologies, ideally serving both of the two main goals: device optimization and reduction of fabrication costs. Inkjet technology is practically evaluated along the whole process chain. Research activities cover many processes, such as surface texturing, emitter formation, or metallization. Furthermore, the inkjet technology itself is manifold as well. It can be used to apply inks that serve as a functional structure, present in the final device, as mask for subsequent structuring steps, or even serve as a reactant source to activate chemical etch reactions. This article reviews investigations of inkjet-printing in the field of silicon photovoltaics. The focus is on the different inkjet processes for individual fabrication steps of a solar cell. A technological overview and suggestions about where future work will be focused on are also provided. The great variety of the investigated processes highlights the ability of the inkjet technology to find its way into many other areas of functional printing and printed electronics.

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Section: Texturizationmentioning

confidence: 81%

Section: Texturizationmentioning

confidence: 99%

Inkjet Technology for Crystalline Silicon Photovoltaics

et al. 2014

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“…In industrial fabrication, textures applied to silicon solar cells are typically the size of several micrometers and are realized masklessly and are thus stochastically arranged. In research, there are various concepts for realizing highly efficient textures based on lithographic techniques ranging from the microscale [2][3][4][5][6] down to the sub-micron regime [7][8][9][10]. The successful transfer of such concepts requires upscalable high-resolution patterning techniques.…”

Section: Introductionmentioning

confidence: 99%

Large area patterning using interference and nanoimprint lithography

et al. 2016

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Interference lithography (IL) is the best suited technology for the origination of large area master structures with high resolution. In prior works, we seamlessly pattern areas of up to 1.2 x 1.2 m2 with periodic features, i.e. a diffraction grating with a period in the micron range. For this process we use an argon ion laser emitting at 363.8 nm. Thus, feasible periods are in the range of 100 μm to 200 nm. Edge-defined techniques or also called (self-aligned) double patterning processes can be used to double the spatial frequency of such structures. This way, we aim to reduce achievable periods further down to 100 nm. In order to replicate master structures, we make use of nanoimprint lithography (NIL) processes. In this work, we present results using IL as mastering and NIL as replication technology in the fields of photovoltaics as well as display and lighting applications. In photovoltaics different concepts like the micron-scale patterning of the front side as well as the realization of rear side diffraction gratings are presented. The benefit for each is shown on final device level. In the context of display and lighting applications, we realized various structures ranging from designed, symmetric or asymmetric, diffusers, antireflective and/or antiglare structures, polarization optical elements (wire grid polarizers), light guidance and light outcoupling structures

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“…However, the throughput for these processes may need further improvement before it is put into commercial production [4], [7]. There is a recent report of a process based on inkjet printing for the fabrication of inverted pyramids on silicon [9]. The process resulted in an ordered array of inverted pyramids, but the base of the pyramid was about 65 μm.…”

Section: Introductionmentioning

confidence: 99%

“…The process resulted in an ordered array of inverted pyramids, but the base of the pyramid was about 65 μm. With further improvement in inkjet printing technology, the process in [9] may become commercially viable. Novel texturization scheme based on low pressure chemical vapour deposition (LPCVD) silicon nitride was reported by Weber et al, where a thin film (2-3 nm) of LPCVD silicon nitride film deposited at 750 • C was etched in HF:HNO 3 solution to generate pits of 5 μm diameter [10].…”

Section: Introductionmentioning

confidence: 99%

Inverted Pyramidal Texturing of Silicon Through Blisters in Silicon Nitride

Saseendran

Kottantharayil

2015

IEEE J. Photovoltaics

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We have demonstrated a novel process for the fabrication of inverted pyramidal structures on silicon. The proposed technique uses no photolithography step and is instead replaced by a thin-film deposition step and thermal annealing. In this paper, inductively coupled plasma CVD (ICP-CVD) silicon nitride was used as the thin film. Blisters were formed on the silicon nitride film upon annealing at 800 • C. The silicon nitride film remaining on the surface of the wafer acts as an etch mask for the texturization process, which is carried out in an alkaline solution. It was observed that only open blisters participated in the etch process, while closed blisters were resistant to the etching solution. It was observed that the gas flow ratio, annealing time, and temperature played an important role in determining the shape, size, and areal density of the blisters. By integrating an argon plasma pretreatment in the silicon nitride deposition process, surface coverage of 51% was obtained for lower annealing temperatures of 550 • C. Upon etching the sample in an alkaline solution, a weighted average reflectance of 17.3% was obtained, indicating the potential of this process. Index Terms-Hydrogen blistering, inverted pyramidal texturing, silicon nitride. 2156-3381

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Light trapping structures for silicon solar cells via inkjet printing

Cited by 16 publications

References 23 publications

Inkjet Technology for Crystalline Silicon Photovoltaics

Inkjet Technology for Crystalline Silicon Photovoltaics

Large area patterning using interference and nanoimprint lithography

Inverted Pyramidal Texturing of Silicon Through Blisters in Silicon Nitride

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