Lightly doped In0.53Ga0.47As/InP SWIR photodetectors with diffusion barrier structure

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

“…Considering dark current, quantum efficiency, and capacitance, the concentration of the DBL is best between 3 × 10 16 and 5 × 10 16 cm −3 at a thickness of 0.1 µm. With the DBL, the dark current is slightly reduced and the capacitance increased a little bit, the same tendency as observed in lattice-matched InGaAs/InP PDs with DBLs [19,35], indicating the validity of our simulation. Experiments will be further conducted with the optimized DBL thickness and doping concentration.…”

“…Given the behavior of the capacitance, we suggest that the DBL remains below 0.1 µm and that the doping concentrations be between 1 × 10 16 and 5 × 10 16 cm −3 . same tendency as observed in lattice-matched InGaAs/InP PDs with DBLs [19,35], indicating the validity of our simulation. Experiments will be further conducted with the optimized DBL thickness and doping concentration.…”

“…Junction depth could be controlled by fine-tuning the diffusion temperature and time in the zinc diffusion process [18]. A highly doped diffusion barrier structure has been reported recently for lattice-matched In 0.53 Ga 0.47 As/InP PDs and was experimentally proved to effectively reduce the diffusion depth into the In 0.53 Ga 0.47 As absorption layer [19]. PD performance with the diffusion barrier layer (DBL) has been analyzed; however, the thickness and the doping concentration of the DBL are fixed in the experiments and may not be applicable for lattice-mismatched In 0.83 Ga 0.17 As/InP PDs.…”