2019 IEEE Topical Workshop on Internet of Space (TWIOS) 2019
DOI: 10.1109/twios.2019.8771257
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Lightweight security solutions for IoT implementations in space

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Cited by 5 publications
(9 citation statements)
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“…The ability of DRAM-based PUFs to provide responses of high quality that can be utilised to provide an acceptable level of security has been examined in a number of relevant works In particular, we note that, under nominal conditions, our run-time implementation of the DRAM decay-based PUF on the PandaBoard ES Rev B3 can provide, within 60 second (s), more than 20 KB of cells whose values have "flipped" in a memory region of 32 MB, while our run-time implementation of the DRAM decay-based PUF on the Intel Galileo Gen 2 board can provide more than 1.7 KB of cells whose values have "flipped" within the same time in a memory region of the same size [86]. In general, we observe that, within 300s (i.e., 5 minutes), ≈2% of the memory cells being utilised as a run-time DRAM decay-based PUF have "flipped", when a PandaBoard ES Rev B3 is used for the implementation of this PUF [86,153], and 0.5% to 1% of the memory cells being utilised as a run-time DRAM decay-based PUF, when an Intel Galileo Gen 2 board is used [83,86,147,153]. Therefore, as the relevant works prove, DRAM decay-based PUF can provide an acceptable level of security under nominal conditions, as the number of bit "flips" observed is rather adequate even if the DRAM refresh operation is suspended for a rather short period of time.…”
Section: Dram-based Pufs Under Nominal Conditionsmentioning
confidence: 88%
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“…The ability of DRAM-based PUFs to provide responses of high quality that can be utilised to provide an acceptable level of security has been examined in a number of relevant works In particular, we note that, under nominal conditions, our run-time implementation of the DRAM decay-based PUF on the PandaBoard ES Rev B3 can provide, within 60 second (s), more than 20 KB of cells whose values have "flipped" in a memory region of 32 MB, while our run-time implementation of the DRAM decay-based PUF on the Intel Galileo Gen 2 board can provide more than 1.7 KB of cells whose values have "flipped" within the same time in a memory region of the same size [86]. In general, we observe that, within 300s (i.e., 5 minutes), ≈2% of the memory cells being utilised as a run-time DRAM decay-based PUF have "flipped", when a PandaBoard ES Rev B3 is used for the implementation of this PUF [86,153], and 0.5% to 1% of the memory cells being utilised as a run-time DRAM decay-based PUF, when an Intel Galileo Gen 2 board is used [83,86,147,153]. Therefore, as the relevant works prove, DRAM decay-based PUF can provide an acceptable level of security under nominal conditions, as the number of bit "flips" observed is rather adequate even if the DRAM refresh operation is suspended for a rather short period of time.…”
Section: Dram-based Pufs Under Nominal Conditionsmentioning
confidence: 88%
“…We have utilised these devices to test the effects of very low temperatures on SRAM PUFs, by investigating the relevant data remanence phenomena that can lead to successful attacks against these PUFs [3,4]. Regarding the ST Microelectronics STM32F407 Discovery (STM32F407G-DISC1) and the ST Microelectronics STM32 Nucleo-64 NUCLEO-L152RE boards, which are shown in Figure 3.3, we have implemented SRAM PUFs utilising their intrinsic SRAMs, in order to test the resilience of such PUF to radiation [147]. By testing the resilience of SRAM PUFs to low temperatures and to radiation, we were able to assess whether they can be utilised in IoT applications that potentially involve adverse operating 19 https://android.googlesource.com/kernel/common/+/2be7d22f062535de59babdb4b5e9de9ff31e817e conditions, e.g., in space missions and other relevant applications.…”
Section: The Static Random Access Memory (Sram) Pufmentioning
confidence: 99%
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