Limits of carrier mobility in Sb-doped SnO<sub>2</sub>conducting films deposited by reactive sputtering

Bissig, Benjamin; Jäger, Timo; Ding, Laura; Tiwari, Ayodhya N.; Romanyuk, Yaroslav E.

doi:10.1063/1.4916586

Cited by 45 publications

(15 citation statements)

References 34 publications

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“…Precise positions and heights of the two mobility maxima are unknown due to a lack of data points. Compared to ITO and AZO (see Table ), achievable electron concentrations in sputter‐deposited tin oxide are comparable, while the carrier mobility at the necessary dopant concentration appears to be limited to values below 30 cm

^{2}

^{- 1}

.…”

Section: Resultsmentioning

confidence: 99%

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Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Weidner

Jia

Shigesato

et al. 2016

Physica Status Solidi (b)

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SnO2 films doped with antimony or tantalum were sputter‐deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter‐deposited tantalum‐doped films with lower than previously achieved resistivity 5.4×10−4 Ω normalcm, carrier density 4.5×1020 cm−3, and mobility 25.7cm2thinmathspaceVs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co‐doped thin films were synthesized for the first time, achieving similar results. Comparison of resistivity values achievable by doping sputter‐deposited tin oxide films with antimony (blue) or tantalum (red) as a function of dopant concentration.

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^{2}

^{- 1}

.…”

Section: Resultsmentioning

confidence: 99%

“…The number of studies available on TTO films is very limited (), much smaller than for ATO. Sputter‐deposited ATO films have generally been found to have comparatively small electron mobilities .…”

Section: State Of Researchmentioning

confidence: 99%

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Weidner

Jia

Shigesato

et al. 2016

Physica Status Solidi (b)

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“…Moreover, it is interesting to note that for heavily doped semiconductors the carrier mobility can be independently obtained from optical (plasmon resonance) and electrical (Hall-effect) measurements. The optically calculated mobility reveals the in-grain scattering because the photon excitation deflects free electrons across the film over a small area, whereas the mobility obtained from Hall-effect measurements accounts also for grain boundary scattering since electrons are transported longitudinally in the layer going over a large number of grains [22][23][24]. Thus, the influence of grain boundary scattering can be deduced from the comparison of the optical and electrical data [25,26].…”

Section: Introductionmentioning

confidence: 99%

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Guillén

Herrero

2016

J Mater Sci

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Heavily doped metal oxide semiconductors are being developed as thin film transparent electrodes for many applications and their deposition at low substrate temperature can extend the use on heat sensitive devices. The structural and electro-optical characteristics of such metal oxide coatings are tightly related and depend on the specific deposition parameters apart from the material composition. In this work, SnO 2 :Sb (ATO) and ZnO:Al (AZO) thin films have been prepared by sputtering at room temperature on glass substrates, changing the deposition time to obtain various layer thicknesses from 0.2 to 0.9 lm; and they have been analyzed by X-ray diffraction, spectrophotometry, and Halleffect measurements. ATO samples crystallize in the tetragonal structure with mean crystallite size increasing from 8 to 20 nm when the film thickness grows. The comparison of Hall mobility and optical mobility values indicates a significant contribution of grain boundary scattering for these ATO layers. Otherwise, AZO films show larger crystallites (21-27 nm) and a strong preferential orientation for analogous thickness increment, resulting in a lower contribution of the grain boundary scattering to the overall Hall mobility. The ingrain mobility for each sample is also related to the respective crystallite size and carrier concentration values.

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“…To meet the market demands of SnO2 thin films, a large variety of metals or ions can be doped into SnO2 thin films to improve both optical and electrical properties [13 -15]. Among different dopants, antimony (Sb) appears to be a suitable dopant for SnO2 since the substitution of Sn 4+ by Sb 5+ into SnO2 lattice highly improves the n-type semiconductor characteristics of SnO2 [14,16]. Furthermore, antimony doped tin oxide (ATO) thin films are transparent conductive oxide (TCO) films seeing that they combine excellent electrical properties, high transparency in visible region and chemical stability [14, 17 -19].…”

Section: Introduction mentioning

confidence: 99%

“…Currently, ATO thin films have been prepared by different methods including electro-deposition and dipcoating [20], sputtering techniques [13,16,21], spray ultrasonic method [14,22], chemical spray pyrolysis technique [23,24], sol-gel techniques [15,19,25,26], plasma-assisted molecular epitaxy [27]. Compared with other preparation methods, herein, ATO thin films were prepared by sol-gel spin-coating method due to its simplicity, low cost and high effectiveness.…”

Section: Introduction mentioning

confidence: 99%

Dependence of Electrical and Optical Properties of Sol-gel-derived SnO2 Thin Films on Sb-substitution

Muhire

Yang

Huo

et al. 2019

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In the present work, Sb-doped SnO2 (ATO) thin films were deposited on Si substrates by spin-coating method and the influence of Sb-doping on surface roughness, structural, optical and electrical properties has been investigated. AFM measurements show that the surface roughness decreases with increasing the Sb-doping concentration up to 5 mol%. XRD results confirm that all prepared ATO films have a tetragonal rutile structure of tin oxide. It has been observed that both the crystallite size and the extinction coefficient decrease with increasing Sb-doping concentration up to 5 mol%, while the refractive index increases with increasing Sb-doping concentration. The electrical resistivity decreases with increasing Sb-doping concentration, and the lowest resistivity obtained is 8.5 × 10-3 Ω.cm for SnO2 doped with 7.5 mol% of Sb.

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Limits of carrier mobility in Sb-doped SnO₂conducting films deposited by reactive sputtering

Cited by 45 publications

References 34 publications

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Dependence of Electrical and Optical Properties of Sol-gel-derived SnO2 Thin Films on Sb-substitution

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Limits of carrier mobility in Sb-doped SnO2conducting films deposited by reactive sputtering

Cited by 45 publications

References 34 publications

Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum

Structural and plasmonic characteristics of sputtered SnO2:Sb and ZnO:Al thin films as a function of their thickness

Dependence of Electrical and Optical Properties of Sol-gel-derived SnO2 Thin Films on Sb-substitution

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Limits of carrier mobility in Sb-doped SnO₂conducting films deposited by reactive sputtering

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum

Comparative study of sputter‐deposited SnO₂ films doped with antimony or tantalum