2011
DOI: 10.1002/pssa.201000060
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LiNbO3 thin film for A1 mode of Lamb wave resonators

Abstract: Currently, a high frequency device more than 3 GHz is required. High frequency resonators with resonant frequencies of 4.5 and 6.3 GHz were fabricated by utilizing an anti‐symmetric first mode (A1) of a Lamb wave having a high velocity consisting of a thin LiNbO3 film deposited by a chemical vapor deposition (CVD) system. By measuring polarities of their LiNbO3 films, it was clarified that the thinner film had a large mixture of +c and −c domains, and the occupation ratio of main polarity influenced their freq… Show more

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Cited by 28 publications
(12 citation statements)
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“…In addition to AlN, the development in LT and LN is just as exciting in the past decade. Like AlN FBAR and SMR, conventional LT and LN SAW met the bottleneck in enhancing k 2 even though both materials are capable of higher k 2 if more advanced modes [zero-order shear horizontal (SH0) or S0 and first-order antisymmetric (A1) modes in Lamb wave family] are accessible [38]- [45]. To this end, plates and films of LT and LN have to be enabled, and reflective boundaries have to set for the surfaces of the films.…”
Section: Higher Coupling Operational Modesmentioning
confidence: 99%
“…In addition to AlN, the development in LT and LN is just as exciting in the past decade. Like AlN FBAR and SMR, conventional LT and LN SAW met the bottleneck in enhancing k 2 even though both materials are capable of higher k 2 if more advanced modes [zero-order shear horizontal (SH0) or S0 and first-order antisymmetric (A1) modes in Lamb wave family] are accessible [38]- [45]. To this end, plates and films of LT and LN have to be enabled, and reflective boundaries have to set for the surfaces of the films.…”
Section: Higher Coupling Operational Modesmentioning
confidence: 99%
“…Alternatively, the first-order antisymmetric (A1) Lamb wave mode resonators based on lithium niobate (LiNbO3) thin films have recently been studied as a compelling solution for sub-6 GHz wideband filters due to their high kt 2 (>20%) and record-break FoM [9]- [12]. Despite their prospect of enabling wideband and low loss filters, the demonstrated A1 devices so far are all laden with the lateral spurious modes [13]- [17].…”
Section: Introductionmentioning
confidence: 99%
“…T HIN-FILM lithium niobate (LiNbO 3 ) based acoustic microsystems have been extensively studied in the last decade, ranging from acoustic resonators [1]- [6], transformers [7]- [9], delay lines [10]- [14], to emerging acoustoelectric amplifiers [15], non-reciprocal networks [16], [17], acousto-optic modulators [18]- [21], and quantum systems [22]. The platform receives growing research attention because various acoustic modes with high electromechanical coupling (K 2 ) and low loss can be excited in thin-film LiNbO 3 .…”
Section: Introductionmentioning
confidence: 99%
“…As a result, it enables efficient piezoelectric transduction between the electrical and acoustic domains. These modes, e.g., fundamental symmetric (S0) [6], shear-horizontal (SH0) [2], and first-order antisymmetric (A1) [1], which could not be efficiently excited in conventional bulk LiNbO 3 substrates [23], are only made available thanks to the thin-film transfer techniques of single-crystal LiNbO 3 [24], [25]. Up to now, thin-film LiNbO 3 devices have been demonstrated from a few MHz [26] to 60 GHz [27].…”
Section: Introductionmentioning
confidence: 99%
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