Line edge and width roughness dependency on each ingredient of extreme ultraviolet molecular resist

Kim, Hyun-Su; Cho, In Wook; Kim, Seong-Sue; Cho, Han-Ku; Oh, Hye−Keun

doi:10.1117/12.814055

Cited by 1 publication

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“…This aerial image is imported into our in-house simulator that uses the Monte-Carlo method. 24) This simulator considered the case of a random initial distribution of resist components. In the PEB process, the deprotection reaction when the acid meets the protected group and the …”

Section: Introductionmentioning

confidence: 99%

Line Edge Roughness Reduction Using Resist Reflow Process for 22 nm Node Extreme Ultraviolet Lithography

Cho

Kim

You

et al. 2010

Jpn. J. Appl. Phys.

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Extreme ultraviolet lithography (EUVL) has been developed and studied for a sub-22 nm semiconductor device. It is difficult to obtain a smooth sub-22 nm pattern because line edge roughness (LER) and linewidth roughness (LWR) cannot be controlled well. According to the 2008 ITRS roadmap, LER has to be below 1.3 nm to achieve a 22 nm node for EUVL. In our previous work, the resist reflow process (RRP), in which the resist is baked above the glass transition temperature (T g ), was very helpful for reducing LER and LWR for EUVL. LER and LWR could be decreased from 6 to 1 nm. As RRP time progresses, however, the critical dimension could become wider because the developed resist can flow more easily when the temperature is above T g . Therefore, another method is suggested to solve this problem. The developed resist, which is intentionally designed with a 1 : 3 line and space (L/S) (11 : 33 nm) pattern, is baked above T g . As a result, LER and LWR can be smoothed by RRP and we could achieve a 22 nm 1 : 1 L/S pattern with a small LER. #

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Section: Introductionmentioning

confidence: 99%