Line‐Profile resist development simulation techniques

Jewett, R.; Hagouel, Paul Isaac; Neureuther, Andrew R.; Duzer, T. Van

doi:10.1002/pen.760170610

Cited by 115 publications

(51 citation statements)

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“…There have been a number of techniques used in etching and deposition problems, such as the level set method (Osher and Sethian 1988;Sethian and Adalsteinsson 1997), the string algorithm (Jewett et al 1977), the method of characteristics (Shaqfeh and Jurgensen 1989), and the cellbased method (Scheckler and Neureuther 1994). The level set method is used here for memory and computation efficiency and its ease of handling topological change.…”

Section: Profile Evolution Algorithmmentioning

confidence: 99%

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Zhou

et al. 2014

Microsyst Technol

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There have been a number of researches focusing on the simulation of silicon anisotropic wet etching (Kakinaga et al. 2004;Zhou et al. 2007Zhou et al. , 2009). All the simulation results have contributed to improving and optimizing the practical process. However, the ICP process itself has a vast number of process variables as pressure, gas flow rates, and input power that influence the process result (Läermer and Schilp 1994). Modeling of the ICP process is much more difficult than that of silicon anisotropic wet etching. The Bosch process consists of multiple cycles of alternating etching and deposition steps, advancing the trenches formed in small increments until the expected aspect ratio is reached. Each phase lasts several seconds. An attempt has been made to model the Bosch process (Zhang et al. 2005;Chen et al. 2013;Zhou et al. 2004; Radjenovic and Radmilovic-Radjenovic 2012; Ertl and Selberherr 2010). A two-dimensional (2-D) simulator by using a string-cell hybrid method for tracking surface evolution with a particle transport model was developed (Zhou et al. 2004), which is suitable for simulations in geometries with translational symmetry in one direction. 3-D simulations of the Bosch process have been reported recently (Radjenovic and Radmilovic-Radjenovic 2012; Ertl and Selberherr 2010). A simplified 3-D model has been developed that uses the etching rates of silicon and polymer as input parameters (Radjenovic and Radmilovic-Radjenovic 2012), which significantly reduces computational time while it is incapable of simulating several phenomena such as the lag effect (Gottscho et al. 1992). A Monte Carlo method was used to calculate local particle fluxes and etching and deposition rates (Ertl and Selberherr 2010), which incorporates higher order re-emissions of particles, but demands long computational time and memory consumption. Based on the particle transport model (Zhou et al. 2004) and the level set method (Osher and Sethian 1988; Sethian and Adalsteinsson 1997), Abstract A deep reactive ion etching (DRIE) process (Bosch process) is used extensively in the fabrication of microelectromechanical systems (MEMS). Modeling and simulation studies have helped improve our understanding and process design. The Bosch process consists of multiple cycles of alternating etching and deposition steps. Based on a narrow band level set method, by integrating etching simulation and deposition simulation modules, a simulation system is proposed for three-dimensional (3-D) simulation of the Bosch process with arbitrarily complex mask shapes. To verify the simulation system, a series of simulations and experiments have been performed. The simulation results are in good agreement with the experiments. The method may be used to optimize the practical Bosch process and to design and control the profile of high-aspect ratio microstructures.

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Section: Profile Evolution Algorithmmentioning

confidence: 99%

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Zhou

et al. 2014

Microsyst Technol

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“…The work in [12] describes the mathematical treatment of the surface evolution as determined by dividing the film into small cells, and removing cells at a rate proportional to . SAMPLE later made use of a string [28] and ray [29] algorithmic approaches to speed up and reduce the memory requirements of the cell method, although these approaches still continued to have difficulties. For simple cross sections, Fig.…”

Section: ) Dissolutionmentioning

confidence: 99%

Using advanced simulation to aid microlithography development

Cole

Barouch²,

Conrad³

et al. 2001

Proc. IEEE

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“…(4), the solubility rate is obtained. The development process is simulated by using a string model to follow the developer-resist interface as a function of time [11]. According to this model, the boundary between developed and undeveloped regions is approximated by a string of straight-line segments.…”

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confidence: 99%

Experimental test of high-resolution process modelling in electron beam lithography at 25 to 50 keV

et al. 1993

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Summary. --An additive process using the three-level resist scheme for X-ray mask fabrication by electron beam lithography is analysed by Monte Carlo simulation of electron scattering. The resist exposure is calculated for specific e-beam test patterns aimed at 0.2 ?m resolution. The time evolution of the developed resist profiles is simulated by using a string model for dissolution. Relevant process variables such as e-beam energy (25 to 50 keV) and resist thickness are investigated. Simulation results demonstrate that 50keV is altogether a preferred condition, compared to 25 keV, leading however to different pattern transfer techniques, according to resist thickness. The process modelling is compared with previously reported experimental results. Good qualitative agreement is found, indicating that modelling can be used as an effective aid in the quantitative evaluation of the process.

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Line‐Profile resist development simulation techniques

Cited by 115 publications

References 1 publication

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Using advanced simulation to aid microlithography development

Experimental test of high-resolution process modelling in electron beam lithography at 25 to 50 keV

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