Line width roughness control for EUV patterning

Petrillo, Karen; Huang, George; Ashworth, Dominic; Ren, Liping; Cho, K.-Y.; Wurm, Stefan; Kawakami, Shinichiro; Huli, Lior; Dunn, Shannon; Ko, Akiteru

doi:10.1117/12.925442

Cited by 7 publications

(11 citation statements)

References 10 publications

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“…99) With further investigations, TBAH developers were also found to be significantly effective in the mitigation of pattern collapse, which consequently results in improved resolution or larger process windows. 7,8,14) Figure 10 shows the mitigation of pattern collapse with the application of the alternative developer solution TBAH. Such an advantage is assumed to be mainly due to the decrease in developer penetration into the resist film.…”

Section: Developmentmentioning

confidence: 99%

“…16) In the search for possible solutions, a trend on the optimization of presently available conventional resist processes has been observed. [8][9][10]17,[95][96][97][98][99] Understanding the sufficiency of present processes and possibly the need for the development of new or alternative processes will be especially important in moving forward to extremely stringent targets required for next-generation semiconductors. 16) Here, we review the development and present status of various alternative resist processes that are proposed for improving LWR/LER.…”

Section: Resist Processingmentioning

confidence: 99%

“…To break the RLS trade-off relationship, a number of groups 8,9,17,98) over the past few years have started and continue investigations on and search for alternatives in the presently available resist processes. Figure 8 shows the various EUV resist process steps discussed in this paper.…”

Section: Alternative Resist Processesmentioning

confidence: 99%

“…In particular, the effect and possible solutions to the trade-off relationship between EUV resist targets, namely, resolution, LWR/LER, and sensitivity, which have been constant topics in EUVL, [8][9][10]14,17) are described and reviewed. Recent works on resist materials focusing on conventional and nonconventional chemical platforms 1,4,5,[11][12][13]18,19) are also discussed.…”

Section: Introductionmentioning

confidence: 99%

“…Recent advances in these materials and process technologies are largely credited to the cooperation and focused efforts of various sectors of the resist community (e.g., industry consortia, universities, and material/ tool manufacturers). 1,[4][5][6][7][8][9][10] Specifically, industry consortia such as Selete, SEMATECH, IMEC, and recently, EIDEC have and continue to promote very conducive research environments for device manufacturers, universities, resist resin/material suppliers, and tool manufacturers. Such collaborations have led to the investigation and realization of new and exciting resist platforms 5,[11][12][13] and processes.…”

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Section: Developmentmentioning

confidence: 99%

Section: Resist Processingmentioning

confidence: 99%

Section: Alternative Resist Processesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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In situdissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy

Santillan¹,

Itani²

2013

SPIE Proceedings

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Preliminary results of in situ analyses of dissolution of resist patterns of half-pitch (hp) lines and spaces (L/S) using high-speed atomic force microscopy are discussed. Initial experiments were conducted on an EUV-exposed 32 nm hp L/S pattern using a standard concentration (0.26 N) of tetramethylammonium hydroxide (TMAH) developer solution. This was done using a carbon nanofiber-based cantilever tip and after various tool enhancements and optimizations. Difference in the dissolution characteristics of various resist polymers such as polyhydroxystyrene (PHS)-based and hybrid (PHS-methacryl) resists was observed. These results are in agreement with the previously obtained results of measurements performed with 32 nm isolated line patterns on resist films developed with diluted developer solutions (1/20 of 0.26 N TMAH), where the PHS-based resist showed a uniformly dissolved, grain-like dissolution characteristic, while the hybrid resist exhibited resist swelling of the exposed resist film.

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