Line width roughness reduction by rational design of photoacid generator for sub-millisecond laser post-exposure bake

Jiang, Jing; Thompson, Michael O.; Ober, Christopher K.

doi:10.1117/12.2046277

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Although the obtained pattern is not very fine, the lithography method for 22 nm half-pitch is confirmed to be feasible. By further reducing the roughness of lithography films, such as employing atomic layer deposition (ALD) to form films, and optimizing the component of Pr, such as increasing photoacid generator (PAG) concentration in Pr, employing the Pr with high deprotection activation energy (that is the Pr needing postexposure bake), or selecting PAG with large acid diffusion length, the quality of interference fringes would be reasonably enhanced.…”

Section: Resultsmentioning

confidence: 99%

Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch

Kong

Luo

Zhao

et al. 2019

ACS Appl. Nano Mater.

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Limited by the cost and complexity, a sub-50 nm lithography node is hard to achieve through the traditional interference lithography. In this paper, the dense lines with halfpitch of 32 nm (∼λ/11) and 22 nm (∼λ/16) are first achieved at the wavelength of 365 nm by simple plasmonic interference lithography. Through selecting the high spatial frequency plasmonic modes in Al/Photoresist (Pr)/Al waveguide and allowing interference with each other, the deep subwavelength plasmonic interference field could be obtained in Pr film. Moreover, the lithography structure is separated from the mask, so etch transfer process from Pr to substrate after lithography is easy to attain, and the mask with high cost could be used multiple times. Meanwhile, a near-field lithography setup was developed, and we experimentally realized the comparatively distinct lithography fringes with the half-pitch of 32 and 22 nm when there is an air gap smaller than ∼20 nm between mask and the lithography films. Compared with the imaging lithography with 1:1 ratio, the plasmonic interference lithography could achieve the demagnified patterns with a 2:1 ratio, which reduces the difficulty and cost of the mask fabrication. It is believed that this method will supply the simple and low-cost nanofabrication scenario in the near future.

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Section: Resultsmentioning

confidence: 99%

Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch

Kong

Luo

Zhao

et al. 2019

ACS Appl. Nano Mater.

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“…Nonionic PAGs include oxime sulfonates, − oxime esters, and N -sulfonyloxyimides . The choice of PAG for an application depends upon many factors such as the wavelength of radiation, − quantum efficiency of acid generation, solubility in the casting solvent, thermal and hydrolytic stability, toxicity, strength of the liberated acid, − line width, acid diffusion, and environmental considerations. , Although the mechanism of the photochemical decomposition of Crivello salts has been studied, − less is known about how nonionic PAGs release acid. In this paper, a commercial UV light PAG called Irgacure PAG 103 − is examined and key photochemical decomposition products are characterized.…”

Section: Introductionmentioning

confidence: 99%

Photochemical Fragmentation of Irgacure PAG 103

2019

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Photoisomerization of Irgacure PAG 103 followed by photocyclization and fragmentation leads to three tricyclic thieno[2,3-b]quinoline-4-carbonitrile heterocyclic compounds. The release of acid which can catalyze polymer resist modifications is indicated by the low pH of an aqueous extract. These reactions are discussed in view of possible mechanisms and how these might influence future design strategies.

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Line width roughness reduction by rational design of photoacid generator for sub-millisecond laser post-exposure bake

Cited by 2 publications

References 5 publications

Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch

Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch

Photochemical Fragmentation of Irgacure PAG 103

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