2015
DOI: 10.1117/12.2225218
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Linear and NLO spectroscopy of GaSe and InSe nanoparticles formed via laser ablation

Abstract: Nanoparticles of layered GaSe, InSe were fabricated by laser ablation (LA) method (KrF laser, λ = 248 nm, 50 Hz, maximum energy 200 mJ, τ = 4 ns) and characterized by: •XRF; •GDOES; •SEM and TEM; •UV-, VIS-, and IRabsorption; •Raman and PL spectroscopy (also in confocal geometry). Results are discussed in relation to the particle size. Absorption spectra of particles with diameter 20 nm and less turned out to be blue shifted and is consisted with a weak confinement effect on Wannier-Mott type excitons. It is s… Show more

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Cited by 4 publications
(2 citation statements)
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References 42 publications
(51 reference statements)
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“…[1]. Optical band gap of GaS measured in the present work is ∆ E = 2.5 eV and in good agreement with existing data [1,9]. Elemental content analysis of grown crystals are as follows: the results obtained by the GDOES confirmed nearly stoihciometry content (49.5 at % of Ga and 49.3 at % of S).…”
Section: Resultssupporting
confidence: 90%
See 1 more Smart Citation
“…[1]. Optical band gap of GaS measured in the present work is ∆ E = 2.5 eV and in good agreement with existing data [1,9]. Elemental content analysis of grown crystals are as follows: the results obtained by the GDOES confirmed nearly stoihciometry content (49.5 at % of Ga and 49.3 at % of S).…”
Section: Resultssupporting
confidence: 90%
“…Semiconductor nanostructures are promising building blocks for future electronic and photonic devices. Nanostructures based on layer-type (2-D) semiconductors, such as GaSe-type (GaS, InSe, GaTe) are of particular interest in terms of the optical, non-linear optical (NLO), solar, X-ray and particles detection applications [1][2][3][4][5][6][7][8][9][10]. Gallium selenide is accepted by world scientific community as an outstanding NLO material [1].…”
Section: Introductionmentioning
confidence: 99%