Linear and non-linear optical properties of reactive magnetron DC sputtered ZnTe thin films for opto-electronic devices

Abstract

Zinc Telluride thin films were prepared by reactive magnetron direct current sputtering method and the temperature of the glass substrates changed from 150 to 350 °C. The band gap of ZnTe films increased from 2.32 to 2.42eV. The normal dispersion of refractive index (n) for ZnTe films is described using the model of Wemple-Di Domenico (WDD) single-oscillator. The oscillator energy, dispersive energy and static refractive index (no) of ZnTe films were reported. The Verdet coefficient (V) is estimated from the normal dispersion studies. The first-order (Ist) and third-order (IIIrd) non-linear optical susceptibilities (χ(1), χ(3)), refractive index (n2) of ZnTe films were calculated.