Linear and Nonlinear Gain of Sb-Based Quantum-Dot Semiconductor Optical Amplifiers

Al-Nashy, B.; Al-Khursan, Amin H.

doi:10.2174/1874476111003030232

Cited by 8 publications

(6 citation statements)

References 14 publications

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“…However, BGaN emits at 199nm at all of the above structures, Figure 5 shows the increasing peak gain and a slight blue shift with increasing Al-mole fraction in the barrier layer of BGaN/AlGaN QD structure attributed to the wider bandgap of AlN, which controls the transitions. Al-barrier controlling of the emission wavelength is also with other QD structures not containing boron [20].…”

Section: A Bgan Structuresmentioning

confidence: 83%

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Deep Ultraviolet BGaN Quantum Dot structures

Saad¹,

Al-Khursan²

2022

jsci

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This research studies boron-containing quantum dot (QD) structures that emit the ultraviolet. Ternary and quaternary lattice-matched structure:, , , , ,, , and and their TE and TM gain spectra, spontaneous emission, spontaneous polarization, and piezoelectric polarization have been examined in these structures. They have high TE and TM spectra under reducing boron content in the QD or barrier layer. The total polarization decreases for the Al-containing systems, which is preferred. Binary systems emit at 199nm, while the quaternary can have a peak wavelength near 235nm. Elongating of the wavelength to 290nm is possible with with high gain at a few boron contents.

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Section: A Bgan Structuresmentioning

confidence: 83%

“…THE PARAMETERS USED IN THE CALCULATIONS[2,12,20]. THE TE AND TMGAIN MODES AND SPONTANEOUS EMISSION FOR QD STRUCTURE.…”

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confidence: 99%

Deep Ultraviolet BGaN Quantum Dot structures

Saad¹,

Al-Khursan²

2022

jsci

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“…Research on SOA device design and modeling gets a lot of importance in 1980's especially for AlGaAs SOAs operating at (830 nm) wavelength and InGaAsP/InP SOAs operating in the (1300-1550 nm) region. In 1989 SOAs designed as devices uses a symmetrical waveguide structures giving much reduced polarization sensitivities [5].…”

Section: Semiconductor Optical Amplifiermentioning

confidence: 99%

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

Al-Nashy¹,

Al-Khursan²

2012

Selected Topics on Optical Amplifiers in Present Scenario

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“…n �.� for diffusion and R �� . n �.� for drift (5) The dominant leakage current is usually due to carrier drift. Therefore the total recombination rate is given by:…”

Section: Past History and Basic Concept Of Reflective Soamentioning

confidence: 99%

Selected Topics on Optical Amplifiers in Present Scenario

Garai¹

2012

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Dr Sisir Kumar Garai was born in 1971 in West Bengal, India. He received the M. Sc. degree in Physics in 1994 and the M. Tech degree in Microwaves in 1998, and awarded the Ph. D degree in Science (Physics) on 6th February, 2012 from 'The University of Burdwan', West Bengal, India. His field of research interest includes Optoelectronics, Optical Computation and Communication, etc., and he has contributed more than twenty five papers in different International Journals in his area of research. He has received the best paper presentation award in '16th West Bengal State Science and Technology Congress-2009' and his name is also included in Marquis Who's Who-2010 & 2011, and in International Biography Centre (IBC)-Cambridge-2011. He has been an Assistant Professor and the -Head of the Department of Physics of M.U.

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Linear and Nonlinear Gain of Sb-Based Quantum-Dot Semiconductor Optical Amplifiers

Cited by 8 publications

References 14 publications

Deep Ultraviolet BGaN Quantum Dot structures

Deep Ultraviolet BGaN Quantum Dot structures

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

Selected Topics on Optical Amplifiers in Present Scenario

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