Linear and nonlinear optical absorption coefficients and refractive index changes in asymmetrical Gaussian potential quantum wells with applied electric field

Guo, Aixin; Du, Jiangfeng

doi:10.1016/j.spmi.2013.08.030

Cited by 54 publications

(26 citation statements)

References 35 publications

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“…From the above articles, it can be seen that the impurity effects on semiconductor qubit in low-dimensional semiconductor nano-materials are exceedingly important. Recently, Guo et al [14] used the effective mass approximation and the compact density matrix method to investigate the linear and nonlinear optical absorption coefficients and refractive index changes in asymmetrical Gaussian potential quantum wells (AGPQWs) with applied electric field. Effects of impurity on the properties of the AGPQW qubit, however, have not been investigated so far by employing this variational method of Pekar type (VMPT) method.…”

Section: Introductionmentioning

confidence: 99%

“…V (z) is the z-directional potential that represents the growth direction of the QWs [14]. V 0 and R are the height of the RbCl AGPQWs and the range of the confinement potential, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Within the framework of effective mass approximation, the Hamiltonian of the electron-phonon interaction system with a HLI at the origin of coordinates can be written as[14] …”

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confidence: 99%

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Impurity Effect of Asymmetric Gaussian Potential Quantum Well Qubit

Xiao

2015

J Low Temp Phys

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On the condition of strong electron-LO phonon coupling in an asymmetrical Gaussian potential quantum well (AGPQW) with a hydrogen-like impurity at the origin of the coordinate, we calculate the eigenenergies and the eigenfunctions of the ground and the first excited states (GFES) by using a variational method of Pekar type. A single qubit can be realized in this two-level quantum system. We calculate the time evolution and the change of the coordinate of the electron's probability density. When the electron is in the superposition state of the GFES, the electron's probability density oscillates in the AGPQW with a certain period T 0 = 20.716 fs. It turns out that due to the presence of the asymmetrical Gaussian potential in the growth direction of the QW, the electron probability density shows a single peak configuration in the coordinate range of z > 0, whereas it equals to zero in the range of z < 0. There is only one peak if the confinement is a two-dimensional symmetric structure in the x y plane of the QW. The oscillating period is a decreasing function of the strength of the Coulombic impurity potential, the height of the AGPQWs and the polaron radius. It is also a decreasing function of the above quantities for R < 0.24 nm, but becomes an increasing one for R > 0.24 nm. It has a minimum when R = 0.24 nm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impurity Effect of Asymmetric Gaussian Potential Quantum Well Qubit

Xiao

2015

J Low Temp Phys

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“…In addition, Wu et al theoretically investigated the polaron effects on the linear and the nonlinear optical absorption coefficients and refractive index changes in cylindrical quantum dots [13]. The linear and nonlinear absorption coefficients as well as the refractive index changes have been studied in a disc shaped quantum dot [14], in asymmetrical Gaussian potential quantum wells [15], and in a parabolic quantum well [16] under the applied electric field.…”

Section: Introductionmentioning

confidence: 99%

Linear and nonlinear phonon-assisted cyclotron resonances in parabolic quantum well under the applied electric field

Phuc

Tung

2014

Superlattices and Microstructures

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“…Close relation between the asymmetry in confinement potential and secondorder nonlinear optical properties in low-dimensional materials has been reported in diverse set of theoretical studies [13][14][15][16][17][18] which bring up the fact that even-order nonlinear optical responses are usually very small in symmetric quantum structures. Inversion symmetry in a potential profile can be broken simply by applying an electric field to a symmetric structure or by using both compositional grading and layer thickness variations [19,20]. Advanced material growing techniques render possible the production of nanostructures with desired size, shape and chemical environment.…”

Section: Introductionmentioning

confidence: 99%

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Şakiroğlu

2017

SDÜ Fen Bil Enst Der

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Abstract:The effects of a static electric field on the nonlinear optical rectification, second-and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.

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Linear and nonlinear optical absorption coefficients and refractive index changes in asymmetrical Gaussian potential quantum wells with applied electric field

Cited by 54 publications

References 35 publications

Impurity Effect of Asymmetric Gaussian Potential Quantum Well Qubit

Impurity Effect of Asymmetric Gaussian Potential Quantum Well Qubit

Linear and nonlinear phonon-assisted cyclotron resonances in parabolic quantum well under the applied electric field

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

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