Linear and nonlinear optical properties of SnS thermally evaporated thin films

Salwa, A.S.; Salem, A.

doi:10.1016/j.ijleo.2019.163140

Cited by 6 publications

(5 citation statements)

References 28 publications

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“…The annealing at (473 K) enhances the quality of the crystalline structure of Bi 2 Te 2.45 Se 0.55 films [15]. Micro-strain, S (non-uniform strain) was determined using XRD according to [16]:…”

Section: Resultsmentioning

confidence: 99%

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Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Salwa

Ahmed

2022

EEJP

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Thermally evaporated Bi2Te2.45Se0.55 thin films were examined for structural alterations and electrical conductivity. Crystallite size, micro-strain, and dislocations were all calculated using the XRD data. By using transmission electron microscopy, the morphology of thin films was investigated (TEM). The study was performed within a temperature range of (300 – 500) K. The electrical energy gap and the conductivity of the as-deposited and annealed (373, 473K) Bi2Te2.45Se0.55 films were measured. The obtained values are (0.27, 0.26, 0.24 eV) and 3.6×103, 3.7×103 and 4.1×103 ohm-1.cm-1 respectively. Hall coefficient, the mean free time, the diffusion coefficient of holes, and the diffusion length, charge carrier's concentration, charge carriers' scattering mechanism, and Hall mobility were also examined. The obtained values of the charge carrier's concentration are 2.12×1017 -2.73×1017 cm-3. The direct and indirect allowed energy gap decreased with increasing annealing temperature. The obtained values of indirect band gap and direct band gap ranges from 0.27- 0.24 eV and 0.375- 0.379 eV, respectively.

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Section: Resultsmentioning

confidence: 99%

“…The dislocation density δ is defined as the length of dislocation lines per volume unity of a crystal. δ is a significant characteristic of the structure, so it is estimated by [16]:…”

Section: Resultsmentioning

confidence: 99%

Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Salwa

Ahmed

2022

EEJP

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“…25 The real dielectric constant ε 1 and the imaginary dielectric constant ε 2 are important parameters that explain the spectrum of electron excitation. 36,37 Additionally, the real dielectric constant describes how much the material reduces the propagation of electromagnetic waves, while the imaginary component indicates how much energy the dielectric material absorbs from the electric field owing to dipole motion. 38 Both dielectric constants are calculated from equation.…”

Section: 303abs D 4 α = [ ]mentioning

confidence: 99%

Study of Structural and Optical Properties of Tl₂Te₃ Thermally Evaporation Thin Films

Salwa

2022

ECS J. Solid State Sci. Technol.

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Tl2Te3 semiconductor thin films different thicknesses were prepared using the thermal evaporation technique at room temperature under a vacuum of 10-5Pa. X-ray Diffraction (XRD) proved the polycrystalline nature of all films. The crystallite size was calculated, and their values varied from 18.21 to 12.6 nm for different thicknesses. The optical properties of the Tl2Te3 thin films were measured in the wavelength range 300-1200 nm. The results reveal that the films had a direct energy gap. The direct energy gap varies from 1.01 to 0.8 eV with film thicknesses. Other linear and nonlinear optical constants such as the refractive index (n), absorption index (K), dielectric constant (ε), and dielectric relaxation time, were determined

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“…Over the past five years, research on the interaction of SnS-based nanostructures with photons has attracted great attention in nanophotonic applications, such as optical modulators, and nonlinear photonic devices. [2,173,176,[256][257][258] Theoretical investigations showed a sizeable bandgap, high carrier mobility, large absorption coefficient, and odd-even quantum confinement effect in 2D SnS. [169,176] Experimentally, a variety of SnS-based nanostructures were employed to achieve the advanced photonic performance, such as 2D SnS NSs, [2,173,176,256] SnS thin films, [258] and SnS/CdS nanoflower heterostructures.…”

Section: Nonlinear Propertiesmentioning

confidence: 99%

“…[2,173,176,[256][257][258] Theoretical investigations showed a sizeable bandgap, high carrier mobility, large absorption coefficient, and odd-even quantum confinement effect in 2D SnS. [169,176] Experimentally, a variety of SnS-based nanostructures were employed to achieve the advanced photonic performance, such as 2D SnS NSs, [2,173,176,256] SnS thin films, [258] and SnS/CdS nanoflower heterostructures. [257] In 2017, our group [173] successfully fabricated BPA SnS NSs by a facile LPE method, demonstrating excellent nonlinear optical response and stability.…”

Section: Nonlinear Propertiesmentioning

confidence: 99%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

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Linear and nonlinear optical properties of SnS thermally evaporated thin films

Cited by 6 publications

References 28 publications

Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Study of Structural and Optical Properties of Tl₂Te₃ Thermally Evaporation Thin Films

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

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Linear and nonlinear optical properties of SnS thermally evaporated thin films

Cited by 6 publications

References 28 publications

Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Characteristics and Optical Properties of Bi2Te2.45Se0.55 Thin Film

Study of Structural and Optical Properties of Tl2Te3 Thermally Evaporation Thin Films

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

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Study of Structural and Optical Properties of Tl₂Te₃ Thermally Evaporation Thin Films