Linear and nonlinear optics, dynamics, and lasing in ZnO bulk and nanostructures

Low temperature photoluminescence from disordered granular ZnO

“…Large direct band gap (3.37 eV at 300 K) and exciton binding energy ~ 60 meV makes ZnO a suitable material for optoelectronic devices [1,2] to be operated near or above room temperature (RT). ZnO is much more radiation hard [3] compared to GaN and is a better choice for devices to function in high radiation environments.…”

Ultrafast exciton dynamics in ZnO: Excitonic versus electron-hole plasma lasing

“…INTRODUCTION Zinc oxide (ZnO) is an ideal material for blue-to-near-UV lasing, 1,2 because it possesses a large direct bandgap of 3.37 eV at room temperature and exhibits a large exciton binding energy of 60 meV. [6][7][8] An additional practical advantage is that the growth of ZnO does not require toxic precursors to yield uniform and high-quality ZnO nanostructures. [6][7][8] An additional practical advantage is that the growth of ZnO does not require toxic precursors to yield uniform and high-quality ZnO nanostructures.…”

“…8,10,11 Because it is difficult to obtain p-type ZnO, population inversion is typically achieved through optical pumping rather than carrier injection. 8,10,11 Because it is difficult to obtain p-type ZnO, population inversion is typically achieved through optical pumping rather than carrier injection.…”

ZnO/ZnMgO: cubic quantum well laser in UV spectrum

“…Since SiC does not produced a bright light emission because of their indirect band gap [6] and ZnSe has produced some defect levels under high current drive, so GaN seems to be the best candidate for these devices [7]. However, zinc oxide (ZnO) has great advantages for light-emitting diodes (LEDs) [8] and laser diodes (LDs) over the currently used semiconductors [9].…”