2020
DOI: 10.35848/1882-0786/ab7e07
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Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing

Abstract: We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used to generate variable analog conductance changes. Magnetic tunnel junction with a perpendicularly magnetized DW layer was fabricated on a silicon substrate. Due to the forward and backward DW motions, a linear and symmetric conductance response was achieved. The impact of memristive behavior on neural networks was eval… Show more

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Cited by 30 publications
(17 citation statements)
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“…Therefore, the probability of exposing the tunnel barrier is slightly larger. At present, the experimental realization of DW-MTJ devices is very limited and the existing literature reports TMR values of less than ∼50%. , In an optimized fabrication process, even if we lose 50% of the TMR at the device level, we can still achieve 8 distinguishable resistance states. For instance, if the low resistance state is at 1000 Ω.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the probability of exposing the tunnel barrier is slightly larger. At present, the experimental realization of DW-MTJ devices is very limited and the existing literature reports TMR values of less than ∼50%. , In an optimized fabrication process, even if we lose 50% of the TMR at the device level, we can still achieve 8 distinguishable resistance states. For instance, if the low resistance state is at 1000 Ω.…”
Section: Resultsmentioning
confidence: 99%
“…Another design by Sasaki's group utilized a three‐terminal Co/Pd multilayer DW MTJ with inherent linear and symmetric conductance response upon applied pulses. [ 293 ] By using optical lithography and Ar ion milling, they managed to achieve an element with 200 steps, allowing a broad, linear dynamic range of conductance to be modulated over 200 pulses. Furthermore, spintronic memristors provide solutions for realizing interconnectivity between thousands of artificial synapses to a single neuron, mimicking the average biological synapse per neuron ratio.…”
Section: Discussionmentioning
confidence: 99%
“…These devices offer low-power consumption, and highly stable and reproducible operation [15][16][17][18][19][20] , according to the experimentally well-established model 21,22 . Experimental demonstrations of DW-based neuromorphic components using magnetic tunnel junctions (MTJs) have been reported 23,24 . MTJ-based resistance output devices generate a current output from the voltage input signal.…”
Section: Introductionmentioning
confidence: 99%