Linear Classification Function Emulated by Pectin‐Based Polysaccharide‐Gated Multiterminal Neuron Transistors

ACS Appl. Electron. Mater.

Guo

et al. 2022

Self Cite

Electronic waste is one of the fastest growing kinds of waste in the world, and to reduce which, the biodegradable electronics are regarded as an important eco-friendly alternative to the environmentally hazardous ones. Here, biodegradable indium-tin-oxide (ITO) thin-film transistors (TFTs) are fabricated on flexible PET substrates with pectin-based polysaccharide films taken as gate dielectrics. For the basic performance, such biodegradable TFTs have not only exhibited excellent characteristics such as a low operating voltage of 1.0 V, a high current ON/OFF ratio (>107), a low subthreshold swing of 80 mV/dec, and a carrier mobility of 14.5 cm2V–1 s–1, but have also realized several important logic operations, such as NOT, AND, NAND, and so on. Additionally, for the eco-friendly purpose, the TFT arrays can be completely dissolved in water within 20 min. Based on the results achieved, the pectin-based biodegradable oxide transistors prepared here are expected to provide a possible choice for the fabrication of biodegradable electronics by using natural biomaterials.

Section: Introductionmentioning

confidence: 92%

Biodegradable Natural Pectin-Based Polysaccharide-Gated Low-Voltage Flexible Oxide Thin-Film Transistors for Logic Applications

ACS Appl. Electron. Mater.

Guo

et al. 2022

Self Cite

“…[28,31] With EDL at interface, the additional carriers in the semiconductor channel will be introduced to the interface, resulting in the increased I DS in backward sweeps compared with that in forward sweeps in transfer curves, which lead to clockwise hysteresis in p-type FETs and anticlockwise hysteresis in n-type FETs. [32,33] Obviously, this EDL caused anticlockwise/clockwise sloop can be adopted to counteract the clockwise/anticlockwise sloop caused by the surface charge trappings, optimizing probably the bias-stress stability of NWFETs.…”

Section: Introductionmentioning

confidence: 99%

Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

Zhuang

et al. 2023

Adv Funct Materials

The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this study, the solution‐processed high‐κ oxide dielectric shell is configured uniformly onto the surface of GaSb NWs, contributing to the excellent bias‐stress stability of as‐constructed p‐type NWFETs. Owing to the interdiffusion between Al and Ga, the oxide dielectric shell is Ga‐AlOx. With an optimal oxide dielectric shell, the as‐constructed p‐type GaSb NWFETs show an insignificant attenuation of on‐state current (within 10%) and a negligible negative shift of threshold voltage under 60 min continuous gate bias, which is far better than that of pristine GaSb NWFETs, resulting from the electric double layer effect. Benefiting from the excellent bias‐stress stability, when configured into the near‐infrared photodetector, NWFET exhibits desirable stability and gate‐controlled photodetection behaviors. Idark and Ilight are effectively modulated by gate voltage, resulting in gate‐controlled responsivity and gain under the illumination of 1550 nm laser. In the end, the as‐constructed bias‐stress stability NWFET demonstrates expected gate‐controlled photodetection imaging and photocommunication ability. The strategy of solution‐processed oxide dielectric shell promises high bias‐stress stability NWFETs for gate‐controlled photodetection and photocommunication.

“…Meanwhile, EDL transistors have been widely reported as artificial synapses. [27][28][29][30][31] The xanthan gum-gated synaptic transistors can realize several key features of the biological synapse, such as excitatory postsynaptic current (EPSC), short-term plasticity (STP), and long-term plasticity (LTP), [32][33][34] which can be used as building blocks of the ATN. Therefore, based on the points mentioned previously, the ATN proposed in this work may provide more opportunities for artificial neuromorphic systems in the aspect of bionic applications, such as bionic robots and prosthetic limbs.…”

Section: Introductionmentioning

confidence: 99%

An Artificial Thermal Nociceptor Based on Xanthan Gum‐Gated Synaptic Transistors to Emulate Human Thermal Nociception

Advanced Intelligent Systems

Guo

et al. 2022

Self Cite

Nociceptors are kinds of sensory neurons that send warning information to the central nervous system in response to noxious stimuli. Thermal nociception happens as the thermal stimulus exceeds 45 °C as this temperature is perceived to be potentially harmful. Simulating this function is of great significance to developing bioinspired electronic skins and humanoid robots, which thus creates more demands for electronic devices that can simulate thermal nociception. Herein, an artificial thermal nociceptor (ATN) is fabricated by integrating a temperature sensor and a synaptic transistor, which can simulate the thermal pain threshold of the human body and operates in a very similar way as the transient receptor potential vanilloid 1 (TRPV1). For this ATN, the function of temperature sensing is realized by a graphite–polydimethylsiloxane (Gr–PDMS) composite temperature sensor, and the synaptic functions, as well as nociceptor features, are emulated through a synaptic transistor using xanthan gum polysaccharide electrolyte as gate dielectric, providing energy‐efficient building blocks for brain‐inspired computation systems. In a word, the ATN proposed can help to open a new avenue and provides more possibilities in the design of artificial sensory systems with the functions of temperature perception and thermal feedback.