Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

“…It was found that to increase the Ga molar fraction of the grade endpoint above 1-x= 0.50, a decrease in growth temperature of ~50 °C was required. We speculate that this was due to the strong dependence of the Ga precursor incorporation efficiency on temperature over this range (25). The HRXRD radial scan, Fig.…”

“…The typical growth temperature was 1080 °C. During the growth of graded layers, the TMA and TEG source flows were adjusted to maintain a linear grade, taking into account the difference in relative incorporation efficiency of the group-III precursors (25). As a result, the V/III molar ratio varied during the growth runs in the range of ~2000 to ~8000.…”

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

“…For instance, researchers at North Carolina State University (NCSU) developed a vertical cold-wall MOCVD reactor capable of reaching temperatures over 1800 °C, as shown in Fig. 1 [13][14][15][16][17]. MOCVD reactors with a similar design are also supplied commercially by various companies [18,19].…”

Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric‐pressure MOVPE

“…Fortunately, the use of a growth technique such as deposition of a low‐temperature buffer layer on sapphire substrate has improved greatly the GaN and Al x Ga 1− x N epilayer crystalline quality 4. In order to enhance the structural and optical properties of Al x Ga 1− x N layers, the effective method is the use of a GaN template‐like pseudosubstrate 5, 6. However, the crystalline quality of Al x Ga 1− x N degrades rapidly with increasing Al mole fraction 7, 8.…”