Linear photogalvanic effects in Janus monolayer MoSSe with intrinsic defects

Liu, Jia; Ji, Xiao Kun; Sun, Miao; Chi, Feng; Chao, Luo Meng; Ye, Hong

doi:10.1016/j.optlastec.2022.108946

Cited by 20 publications

(3 citation statements)

References 24 publications

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“…However, the relationship between the material's structural characteristics and intrinsic electronic and optical responses remains underexplored. [29][30][31] For example, understanding the behavior of defects in 2D materials [32][33][34][35][36][37][38][39][40][41] has enabled the realization of many quantum effects, including valley coherence, [42][43][44][45][46] spin polarized Landau levels, [47,48] valley Zeeman effect, [49] ferromagnetic ordering, [50,51] the realization of single quantum emitters. [52][53][54] Similarly, the fundamental understanding of the effects of defects on the structural and material properties of Janus TMDs holds the key to their high-quality manufacturing of superlattices, understanding their quantum properties, and assessing and tuning the electrical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

The Defects Genome of Janus Transition Metal Dichalcogenides

Sayyad,

Kopaczek,

Gilardoni

et al. 2024

Advanced Materials

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Two‐dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two‐faced structure, broken‐mirror symmetry, and consequent colossal polarisation field within the monolayer. While efforts have been made to achieve high‐quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain‐boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through High‐resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (VS and VSe) and double chalcogen vacancy (VS −VSe), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h‐BN‐encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.This article is protected by copyright. All rights reserved

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Section: Introductionmentioning

confidence: 99%

The Defects Genome of Janus Transition Metal Dichalcogenides

Sayyad,

Kopaczek,

Gilardoni

et al. 2024

Advanced Materials

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“…Liu and Li et al further detected the 2D Janus MXY-induced dipole moments, vibrational frequencies, and direct and indirect bandgap transitions to be correlated with the atomic radii and absolute electro negativities of the sulfur group elements X and Y by first-principles calculations. 26,27 A polar material MoSSe is created by replacing the S atoms on the monolayer by Se atoms, while the other atoms remain unaffected. 28 Based on first-principles calculations, Zhao et al showed that the MoSSe/SiC heterojunction is characterized by a type-II band arrangement, which promotes the efficient spatial separation of photogenerated electrons and holes.…”

Section: Introductionmentioning

confidence: 99%

First principles calculations of the electronic configuration and photocatalytic performance of GaSe(Ga₂SSe)/MoS₂(MoSSe) heterojunctions

Li,

Ren,

et al. 2023

J. Mater. Chem. C

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“…Furthermore, there has been found that vacancy and substitution-doping in 2D systems can largely enhance the strength of PGEs because of their reduced symmetry or the lack of spatial inversion symmetry [9,22]. Therefore, many works, such as in the WTe 2 , BC 2 P, Janus WSSe, In 2 SSe, MoSSe and defective silicane photodetectors [9,[22][23][24][25][26], have manifested that vacancy and doping were important factors influencing the strength of PGE which should be considered.…”

Section: Introductionmentioning

confidence: 99%

Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy and substitution-doping

Fu,

Lin,

et al. 2023

Nanotechnology

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The photogalvanic effects (PGEs) in low-dimensional devices have attracted great interests recently. Herein, based on non-equilibrium Green’s function combined with density functional theory, we investigated spin-dependent PGE phenomena in the BiC photodetector for the case of linearly polarized light and zero bias. Due to the presence of strong spin-orbital interaction (SOI) and C3v symmetry for the BiC monolayer, the armchair and zigzag BiC photodetectors produce robust spin-dependent PGEs which possess the cos(2θ) and sin(2θ) relations on the photon energies. Especially, the armchair and Bi-vacancy armchair BiC photodetector can produce fully spin polarization, and pure spin current was found in the armchair and zigzag BiC photodetector. Furthermore, after introducing the Bi-vacancy, C-vacancy, Bi-doping and C-doping respectively, corresponding armchair and zigzag BiC photodetector can produce higher spin-dependent PGEs for their Cs symmetry. Moreover, the behaviors of spin-dependent photoresponse are highly anisotropic and can be tuned by the photon energy. This work suggested great potential applications of the BiC monolayer on PGE-driven photodetectors in low energy-consumption optoelectronics and spintronic devices.

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Linear photogalvanic effects in Janus monolayer MoSSe with intrinsic defects

Cited by 20 publications

References 24 publications

The Defects Genome of Janus Transition Metal Dichalcogenides

The Defects Genome of Janus Transition Metal Dichalcogenides

First principles calculations of the electronic configuration and photocatalytic performance of GaSe(Ga₂SSe)/MoS₂(MoSSe) heterojunctions

Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy and substitution-doping

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Linear photogalvanic effects in Janus monolayer MoSSe with intrinsic defects

Cited by 20 publications

References 24 publications

The Defects Genome of Janus Transition Metal Dichalcogenides

The Defects Genome of Janus Transition Metal Dichalcogenides

First principles calculations of the electronic configuration and photocatalytic performance of GaSe(Ga2SSe)/MoS2(MoSSe) heterojunctions

Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy and substitution-doping

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First principles calculations of the electronic configuration and photocatalytic performance of GaSe(Ga₂SSe)/MoS₂(MoSSe) heterojunctions