Linear properties of ternary chalcopyrite semiconductors

Abstract

Linear properties of ternary chalcopyrite semiconductors have been studied. New relations based on plasma oscillations theory of solids have been proposed for calculation of homopolar, heteropolar and average energy gaps, dielectric constant and ionicity of A-C and B-C bonds in A I B III C 2 VI and A II B IV C 2 V groups of semiconductors. The values of these parameters for 13 new chalcopyrites of A II B IV C 2 V family have been calculated. The calculated values are compared with the available reported values and a fairly good agreement has been obtained.

Synergistic effects of carbon black and carbon nanotubes on the electrical resistivity of poly(butylene‐terephthalate) nanocomposites

“…These materials can be applied where charge dissipation and electrical conductivity are desired, such as films for packaging of sensitive electronics components or materials subjected to Corona treatments. The control of the filler dispersion quality represents one of the most critical and challenging technical issues, because an inhomogeneous dispersion in filled polymers can lead to problems such as heavy process dependency …”

Theoretical Study of Photo-Luminescence Emission Using the Line Shape Function for Semiconductor Quantum Dots

“…The parameters and constants for CdS has been taken as E0  2.43 eV, m * e  0.19m0 [12], m * h  0.8m0 [12][13][14], 2  5.7  10 7 /c 2 [12][13][14]…”

The Electronic Structure and Chemical Bonding in MgPbP2

“…The bandgap of these compounds is in the range from 1.0 to 2.0 eV that makes them to be very promising as elements of photoelectronic devices. [1][2][3] There is a group of magnesium containing compounds within the II-IV-V 2 semiconductor family, which still have not been studied enough.…”