Linear Relationship between Photo-Induced Changes in Gap Energy and Refractive Index of Chalcogenide Glasses

Utsugi, Yasushi

doi:10.1002/(sici)1521-3951(199903)212:1<r9::aid-pssb99999>3.0.co;2-z

Cited by 11 publications

(3 citation statements)

References 3 publications

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“…It may be valuable to clarify the relationship between the optical and the volume changes. As is known, the photodarkening accompanies an increase in refractive indices in transparent wavelength regions (Δ n / n ≈ 0.03/2.6 in As 2 S 3 at room temperature), which is quantitatively consistent with results 30 deduced from the Kramers–Kronig relationship and also using the simpler Moss relation n 4 E g ≈ 77 31, where E g is the band‐gap energy in eV.…”

Section: Optical and Volume Changessupporting

confidence: 87%

Elastic polyaniline with EPDM and dodecylbenzenesulfonic acid as plasticizers

Faez

Paoli

2001

J of Applied Polymer Sci

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Elastomeric polyaniline was prepared by being mixed with ethylene-propylene-diene (EPDM) rubber in low concentrations (10, 20, or 30 wt %). The mixture was made in an internal mixer coupled to a torque rheometer. The polyaniline was doped with dodecylbenzenesulfonic acid (DBSA) via reactive processing during the mixing. When the EPDM rubber was added to the polyaniline and DBSA, the doping reaction was not interrupted, as demonstrated by an increase in the torque values. We chose the relative DBSA and EPDM concentrations to obtain the highest conductivities (10 Ϫ1 to 10 Ϫ3 S cm Ϫ1 ) and the best mechanical properties.

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Section: Optical and Volume Changessupporting

confidence: 87%

Elastic polyaniline with EPDM and dodecylbenzenesulfonic acid as plasticizers

Faez

Paoli

2001

J of Applied Polymer Sci

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“…model that in a dielectric medium with dielectric constant ε and refractive index n, all energy levels are scaled down by a factor ε 2 or n 4 , Moss proposed the well-known relation. The co-variation of refractive index (n) and optical bandgap (E g ) is a manifestation of this well-known Moss rule [13][14][15][16][17][18][19][20][21], which states that n 4 E g = constant.…”

Section: Introductionmentioning

confidence: 99%

Achieving superior band gap, refractive index and morphology in composite oxide thin film systems violating the Moss rule

Sahoo¹,

Thakur²,

Tokas³

2006

J. Phys. D: Appl. Phys.

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The interrelation between energy gap and high frequency refractive index in semiconductors and dielectrics is manifested by an inverse law which is popularly known as the Moss rule. This semi-empirical relationship is based on the fundamental principle that in a dielectric medium all energy levels are scaled down by a factor of the square of the dielectric constant. Such a rule is obeyed by most pure semiconductors and dielectrics with a few rare violations in composite materials which display several interesting parametric and microstructural evolutions. The present results are based on some specific oxide composite thin films involving Gd2O3/SiO2 and ZrO2/SiO2 codeposited systems that have displayed a superior refractive index and energy gaps violating the semi-empirical Moss rule. Also, morphological supremacy is also distinctly noticed in these composites. The novel microstructural and polarizability properties of such composite systems were probed through multi-mode atomic force microscopy and phase modulated spectroscopic ellipsometry using refractive index modelling, autocorrelation and height–height correlation functional analyses. These binary composite thin films have shown their potential as well as the possibility of meeting expectations in satisfying the challenging optical coating requirements of the deep ultraviolet spectral region.

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“…[17,18] We see in Figure 1 (and Table 1) that the redshift ΔE is maximal at the average atomic coordination number of Z % 2.65, with a peak of %130 meV probably existing near Ge 20 As 25 S 55 . Note that, relying on the Moss rule, [19] n 4 E g [eV] % 95, which has been demonstrated to work well in related subjects, [20,21] we expect using E g % 2.6 eV (Table 1) and refractive index n % 2.5 [22,23] that this ΔE accompanies a marked refractive-index change of %0.03. Note that the present result is consistent with that for Ge─As─S with Z ¼ 2.4-2.95, [9] the both results appearing in harmony also with increasing redshifts with x (and Z ) in annealed films of Ge x As 25 Se 75Àx (x ¼ 5, 15, and 25, corresponding to Z ¼ 2.3, 2.5, and 2.7), [24] the system which is assumed to be isostructural (with smaller optical gaps) with Ge─As─S.…”

Section: Resultsmentioning

confidence: 99%

Maximal Photodarkening in the Ge–As–S Glass System

Tanaka

2021

Physica Status Solidi (b)

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Many studies have been conducted on the photodarkening in chalcogenide glasses, and a maximal change is demonstrated to appear around Ge20As25S55. However, the reason for this selected composition remains unanswered, for which a plausible idea is proposed here. It seems that the composition has a maximal atomic volume in the ternary system, which probably gives rise to least photoexpansion (or photocontraction). The idea suggests that disordered, moderately‐rigid networks are effective in enhancing the photodarkening through suppressing macroscopic viscous relaxation.

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Linear Relationship between Photo-Induced Changes in Gap Energy and Refractive Index of Chalcogenide Glasses

Cited by 11 publications

References 3 publications

Elastic polyaniline with EPDM and dodecylbenzenesulfonic acid as plasticizers

Elastic polyaniline with EPDM and dodecylbenzenesulfonic acid as plasticizers

Achieving superior band gap, refractive index and morphology in composite oxide thin film systems violating the Moss rule

Maximal Photodarkening in the Ge–As–S Glass System

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